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IXFX50N50

P1-P3P4-P4
© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 50N50 50 A
55N50 55 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
50N50 200 A
55N50 220 A
I
AR
T
C
= 25°C 50N50 50 A
55N50 55 A
E
AR
T
C
= 25°C60mJ
E
AS
T
C
= 25°C3J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
5 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 520 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 2.5 4.5 V
I
GSS
V
GS
= ±20 V, V
DS
= 0 ±200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C25µA
V
GS
= 0 V T
J
= 125°C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
50N50 100 mΩ
Note 1 55N50 80 m Ω
Single Die MOSFET
Features
l
International standard package
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
l
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
V
DSS
I
D25
R
DS(on)
IXFX 50N50 500 V 50 A 100 m
ΩΩ
ΩΩ
Ω
IXFX 55N50 500 V 55 A 80 m
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 250 ns
HiPerFET
TM
Power MOSFETs
98507D (04/02)
PLUS 247
TM
(IXFX)
G
D
D (TAB)
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1 45 S
C
iss
9400 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1280 pF
C
rss
460 pF
t
d(on)
45 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60 ns
t
d(off)
R
G
= 2 Ω (External), 120 ns
t
f
45 ns
Q
g(on)
330 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
55 nC
Q
gd
155 nC
R
thJC
0.22 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 55N50 55 A
50N50 50 A
I
SM
Repetitive; 55N50 220 A
pulse width limited by T
JM
50N50 200 A
V
SD
I
F
= I
S
, V
GS
= 0 V Note 1 1.5 V
t
rr
250 ns
Q
RM
1.0 µC
I
RM
10 A
I
F
=25 A,-di/dt = 100 A/µs, V
R
= 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
Note: 1.Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFX 50N50
IXFX 55N50
© 2002 IXYS All rights reserved
T
C
- Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
10
20
30
40
50
60
T
J
- Degrees C
25 50 75 100 125 15
0
R
DS(ON)
- Normalized
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
GS
- Volts
3.0 3.5 4.0 4.5 5.0 5.5 6.0
I
D
- Amperes
0
20
40
60
80
100
T
C
- Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
10
20
30
40
50
60
I
D
- Amperes
0 20 40 60 80 100 120
R
DS(ON)
- Normalized
0.8
1.2
1.6
2.0
2.4
2.8
V
DS
- Volts
0 4 8 12 16 20 24
I
D
- Amperes
0
20
40
60
80
100
V
DS
- Volts
0 4 8 12162024
I
D
- Amperes
0
20
40
60
80
100
120
140
5V
V
GS
= 10V
V
GS
= 10V
9V
8V
7V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
6V
6V
5V
T
J
= 25
o
C
I
D
= 55A
T
J
= 125
O
C
T
J
= 125
o
C
V
GS
= 10V
9V
8V
7V
I
D
= 27.5A
I
D
- Amperes
0 20 40 60 80 100 120
R
DS(ON)
- Normalized
0.8
1.2
1.6
2.0
2.4
2.8
V
GS
= 10V
V
GS
= 10V
T
J
= 25
O
C
T
J
= 25
o
C
T
J
= 125
O
C
IXF_55N50
IXF_50N50
T
J
= 25
O
C
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 3. R
DS(on)
normalized to 0.5
I
D25
value vs. I
D
Figure 4. R
DS(on)
normalized to 0.5
I
D25
value vs. T
J
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
IXFX 50N50
IXFX 55N50
P1-P3P4-P4

IXFX50N50

Mfr. #:
Buy IXFX50N50
Manufacturer:
Littelfuse
Description:
MOSFET 50 Amps 500V 0.1 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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