IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure10. Forward Bias Safe Operating Area
IXFX 50N50
IXFX 55N50
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(th)
JC
- K/W
0.00
0.01
0.10
1.00
0.2 0.4 0.6 0.8 1.0
I
D
- Amperes
0
20
40
60
80
100
T
J
= 125
O
C
T
J
= 25
O
C
Gate Charge - nC
0 50 100 150 200 250 300 350
V
GS
- Volts
0
2
4
6
8
10
12
V
DS
= 250V
I
D
= 27.5A
V
DS
- Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
100
1000
10000
Crss
Coss
Ciss
f = 1MHz
