LA6585MC-AH-M

LA6585MC
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4
BLOCK DIAGRAM
Figure 2. Block Diagram
H
1.5VRG
FG
OUT1
OUT2
V
CC
IN
GND
Discharge pulse
Control
circuit
Charge discharge
RD
CT = 0.47 to 1 mF
HB
IN+
LA6585MC
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5
APPLICATION CIRCUIT
Figure 3. Sample Application Circuit
GND
V
CC
FG
OUT1
OUT2
IN+
IN
HB
*1
Di
Cr
*2
On board element
H
R2
H
R1
*3
IN+
IN
HB
*5
RD
*4
CT
*1: When the breakdown protective DI at reverse
connection is to be used, it is necessary to insert
the capacitor Cr to secure the regenerative current
route. Similarly, Cr must be provided to enhance
the reliability when there is no capacitor near the
fan power line.
*2: To obtain Hall bias from V
CC
, carry out bias to
V
CC
with resister R2 as shown in the figure.
Linear driving is made through voltage control of
the coil by amplifying the Hall output. When the
Hall element output is large, the startup
performance and efficiency are improved.
Adjustment of the Hall element can reduce the
noise further.
*3: To obtain Hall bias from the HB pin, carry out
constant-voltage bias at about 1.5 V, which enables
the Hall element to generate the stable Hall output
satisfactory in temperature characteristics.
Adjustment of the Hall output amplitude is made
with R1. (When V
CC
= 12 V, the step *2 above
proves advantageous for IC heat generation.)
*4: Keep this open when not using.
*5: When the wiring from the Hall output to IC Hall
input is long, noise may be carried through the
wiring.
In this case, insert the capacitor as shown in the
figure.
ORDERING INFORMATION
Device Package Wire Bond Shipping
(Qty / Packing)
LA6585MCAH SOIC10 NB
(PbFree / Halogen Free)
Au wire 2,000 / Tape & Reel
LA6585MCAHM SOIC10 NB
(PbFree / Halogen Free)
Au wire 2,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
.
SOIC10 NB
CASE 751BQ
ISSUE B
DATE 26 NOV 2013
SEATING
PLANE
1
5
610
h
X 45
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.10mm TOTAL IN EXCESS OF ’b’
AT MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15mm
PER SIDE. DIMENSIONS D AND E ARE DE-
TERMINED AT DATUM F.
5. DIMENSIONS A AND B ARE TO BE DETERM-
INED AT DATUM F.
6. A1 IS DEFINED AS THE VERTICAL DISTANCE
FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
D
E
H
A1
A
SCALE 1:1
DIM
D
MIN MAX
4.80 5.00
MILLIMETERS
E 3.80 4.00
A 1.25 1.75
b 0.31 0.51
e 1.00 BSC
A1 0.10 0.25
A3 0.17 0.25
L 0.40 0.80
M 0 8
H 5.80 6.20
C
M
0.25
M
__
XXXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
GENERIC
MARKING DIAGRAM*
1
10
*This information is generic. Please refer
to device data sheet for actual part
marking. PbFree indicator, “G”, may
or not be present.
DIMENSION: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
XXXXX
ALYWX
G
1
10
h 0.37 REF
L2 0.25 BSC
A
TOP VIEW
C0.20
2X 5 TIPS
A-B D
C0.10 A-B
2X
C0.10 A-B
2X
e
C0.10
b10X
B
C
C0.10
10X
SIDE VIEW
END VIEW
DETAIL A
6.50
10X
1.18
10X
0.58
1.00
PITCH
RECOMMENDED
1
L
F
SEATING
PLANE
C
L2
A3
DETAIL A
D
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
© Semiconductor Components Industries, LLC, 2002
October, 2002 Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON52341E
ON SEMICONDUCTOR STANDARD
SOIC10 NB
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2

LA6585MC-AH-M

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers BRUSHLESS MOTOR DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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