ZXMP6A16DN8TA Datasheet ZXMP6A16DN8TA | P1-P3

ZXMP6A16DN8

Document number: DS33586 Rev. 5 - 2

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June 2016

ZXMP6A16DN8

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Product Summary

BV

DSS

R

DS(ON)

Max

Package

I

D

T

A

= +25°C

(Notes 4 & 6)

-60V

85mΩ @ V

GS

= -10V

SO-8

-3.9A

125mΩ @ V

GS

= -4.5V

-3.2A

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 DC-DC Converters

 Power Management Functions

 Disconnect Switches

 Motor Control

Features

 Low On-Resistance

 Fast Switching Speed

 Low Threshold

 Low Gate Drive

 Low Profile SOIC Package

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 An Automotive-Compliant Part is Available Under Separate

Datasheet (ZXMP6A16DN8Q)

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

ZXMP6A16DN8TA

SO-8

500/Tape & Reel

ZXMP6A16DN8TC

SO-8

2,500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Equivalent Circuit

Top View

SO-8

Top View

D1S1

G1

S2

G2

D1

D2

S2

G2

D1

S1

G1

ZXMP6A16D = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 16 = 2016)

WW = Week (01 - 53)

Green

ZXMP6A16DN8

Document number: DS33586 Rev. 5 - 2

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ZXMP6A16DN8

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-60

V

Gate-Source Voltage

(Note 5)

V

GS

20

V

Continuous Drain Current

V

GS

= 10V

(Notes 7 & 9)

I

D

-3.9

A

T

A

= +70°C

(Notes 7 & 9)

-3.1

(Notes 6 & 9)

-2.9

Pulsed Drain Current

(Notes 8 & 9)

I

DM

-18.3

A

Continuous Source Current (Body Diode)

(Notes 7 & 9)

I

S

-3.2

A

Pulsed Source Current (Body Diode)

(Notes 8 & 9)

I

SM

-18.3

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Notes 6 & 9)

P

D

1.25

10.0

W

mW/°C

(Notes 6 & 10)

1.81

14.5

(Notes 7 & 9)

2.15

17

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

R

θJA

100

°C/W

(Notes 6 & 10)

70

(Notes 7 & 9)

60

Thermal Resistance, Junction to Lead

(Notes 9 & 11)

R

θJL

48.85

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 5. AEC-Q101 V

GS

maximum is 16V.

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. Same as Note (5), except the device is measured at t  10 sec.

8. Same as Note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.

9. For a dual device with one active die.

10. For a device with two active die running at equal power.

11. Thermal resistance from junction to solder-point.

ZXMP6A16DN8

Document number: DS33586 Rev. 5 - 2

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June 2016

ZXMP6A16DN8

Thermal Characteristics (Continued)

100m 1 10 100

10m

100m

1

10

Single Pulse

T

amb

=25°C

One active die

R

DS(on)

Limited

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

-I

D

Drain Current (A)

-V

DS

Drain-Source Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Two active die

One active die

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

10

20

30

40

50

60

70

80

90

100

110

T

amb

=25°C

One active die

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

1

10

100

Single Pulse

T

amb

=25°C

One active die

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

ZXMP6A16DN8TA

ZXMP6A16DN8TA

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