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ZXMP6A16DN8TA

P1-P3P4-P6P7-P8
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
4 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
µA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
-1.0
V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12)
R
DS(ON)
85
mΩ
V
GS
= -10V, I
D
= -2.9A
125
V
GS
= -4.5V, I
D
= -2.4A
Forward Transconductance (Notes 12 & 13)
g
FS
7.2
S
V
DS
= -15V, I
D
= -2.9A
Diode Forward Voltage (Note 12)
V
SD
-0.85
-0.95
V
I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
Reverse Recovery Time (Note 13)
t
RR

29.2
ns
I
S
= -2A, di/dt = 100A/µs,
T
J
= +25°C
Reverse Recovery Charge (Note 13)
Q
RR
39.6
nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
C
ISS
1,021
pF
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
OSS
83.1
pF
Reverse Transfer Capacitance
C
RSS
56.4
pF
Total Gate Charge
Q
G

12.1

nC
V
GS
= -5V
V
DS
= -30V,
I
D
= -2.9A
Total Gate Charge
Q
G
24.2
nC
V
GS
= -10V
Gate-Source Charge
Q
GS
2.5
nC
Gate-Drain Charge
Q
GD
3.7
nC
Turn-On Delay Time
t
D(ON)
3.5
ns
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
6.0Ω
Turn-On Rise Time
t
R
4.1
ns
Turn-Off Delay Time
t
D(OFF)
35
ns
Turn-Off Fall Time
t
F
10
ns
Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
5 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Typical Characteristics
0.1 1 10
0.1
1
10
0.1 1 10
0.01
0.1
1
10
2 3 4
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1 1 10
0.1
1
10
0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
4V
10V
4V
3.5V
-V
GS
2.5V
4.5V
3V
Output Characteristics
T = 25°C
-V
GS
-I
D
Drain Current (A)
-V
DS
Drain-Source Voltage (V)
5V
2V
3.5V
3V
5V
10V
2.5V
Output Characteristics
T = 150°C
-I
D
Drain Current (A)
-V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
-V
DS
= 10V
T = 25°C
T = 150°C
-I
D
Drain Current (A)
-V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= -10V
I
D
= - 2.9A
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
Normalised R
DS(on)
and V
GS(th)
Tj Junction Temperature (°C)
5V
4.5V
10V
3V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 25°C
-V
GS
R
DS(on)
Drain-Source On-Resistance

-I
D
Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-V
SD
Source-Drain Voltage (V)
-I
SD
Reverse Drain Current (A)
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
6 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Typical Characteristics (Continued)
0.1 1 10
0
200
400
600
800
1000
1200
1400
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C Capacitance (pF)
-V
DS
- Drain - Source Voltage (V)
0 5 10 15 20
0
2
4
6
8
10
I
D
= -2.9A
V
DS
= -30V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
-V
GS
Gate-Source Voltage (V)
Test Circuits
P1-P3P4-P6P7-P8

ZXMP6A16DN8TA

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Manufacturer:
Diodes Incorporated
Description:
MOSFET Dl 60V P-Chnl UMOS
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