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EL5211TIYEZ-T7

P1-P3P4-P6P7-P9P10-P12P13-P15
EL5211T
4
FN6893.0
May 12, 2010
GBWP Gain-Bandwidth Product A
V
= -10, R
F
= 1kR
G
= 100
R
L
= 1k1k (probe), C
L
= 1.5pF
32 MHz
PM Phase Margin A
V
= -10, R
F
= 1kR
G
= 100
R
L
= 1k1k (probe), C
L
= 1.5pF
50 °
CS Channel Separation f = 5MHz 90 dB
Electrical Specifications V
S
+ = +5V, V
S
- = -5V, R
L
= 1k to 0V, T
A
= +25°C, Unless Otherwise Specified. (Continued)
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
Electrical Specifications V
S
+ = +5V, V
S
- = 0V, R
L
= 1k to 2.5V, T
A
= +25°C, Unless Otherwise Specified.
PARAMETER DESCRIPTION CONDITION MIN TYP MAX UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage V
CM
= 2.5V 5 18 mV
TCV
OS
Average Offset Voltage Drift (Note 6) 8 Ld HMSOP package 11 µV/°C
8 Ld DFN package 8 µV/°C
I
B
Input Bias Current V
CM
= 2.5V 2 60 nA
R
IN
Input Impedance 1G
C
IN
Input Capacitance 2pF
CMIR Common-Mode Input Range -0.5 +5.5 V
CMRR Common-Mode Rejection Ratio For V
IN
from -0.5V to 5.5V 45 68 dB
A
VOL
Open-Loop Gain 0.5V V
OUTx
4.5V 62 82 dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low I
L
= -4.2mA 60 150 mV
V
OH
Output Swing High I
L
= +4.2mA 4.85 4.94 V
I
SC
Short-circuit Current V
CM
= 2.5V, Source: V
OUTx
short to V
S
-,
Sink: V
OUTx
short to V
S
+
±110 mA
I
OUT
Output Current ±65 mA
POWER SUPPLY PERFORMANCE
(V
S
+) - (V
S
-) Supply Voltage Range 4.5 19 V
I
S
Supply Current V
CM
= 2.5V, No load 6.0 7.5 mA
PSRR Power Supply Rejection Ratio Supply is moved from 4.5V to 19V 60 75 dB
DYNAMIC PERFORMANCE
SR Slew Rate (Note 7) 1V V
OUTx
4V, 20% to 80% 75 V/µs
t
S
Settling to +0.1% (Note 8) A
V
= +1, V
OUTx
= 2V step,
R
L
= 1k1k (probe), C
L
= 1.5pF
90 ns
BW -3dB Bandwidth R
L
= 1kC
L
= 1.5pF 60 MHz
GBWP Gain-Bandwidth Product A
V
= -10, R
F
= 1kR
G
= 100
R
L
= 1k1k (probe), C
L
= 1.5pF
32 MHz
PM Phase Margin A
V
= -10, R
F
= 1kR
G
= 100
R
L
= 1k1k (probe), C
L
= 1.5pF
50 °
CS Channel Separation f = 5MHz 90 dB
EL5211T
5
FN6893.0
May 12, 2010
Electrical Specifications V
S
+ = +18V, V
S
- = 0V, R
L
= 1k to 9V, T
A
= +25°C, Unless Otherwise Specified.
PARAMETER DESCRIPTION CONDITION MIN TYP MAX UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage V
CM
= 9V 7 18 mV
TCV
OS
Average Offset Voltage Drift (Note 6) 8 Ld HMSOP package 14 µV/°C
8 Ld DFN package 11 µV/°C
I
B
Input Bias Current V
CM
= 9V 2 60 nA
R
IN
Input Impedance 1G
C
IN
Input Capacitance 2pF
CMIR Common-Mode Input Range -0.5 +18.5 V
CMRR Common-Mode Rejection Ratio For V
IN
from -0.5V to 18.5V 53 75 dB
A
VOL
Open-Loop Gain 0.5V V
OUTx
17.5V 62 104 dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low I
L
= -6mA 80 150 mV
V
OH
Output Swing High I
L
= +6mA 17.85 17.92 V
I
SC
Short-circuit Current V
CM
= 9V, Source: V
OUTx
short to V
S
-,
Sink: V
OUTx
short to V
S
+
±300 mA
I
OUT
Output Current ±65 mA
POWER SUPPLY PERFORMANCE
(V
S
+) - (V
S
-) Supply Voltage Range 4.5 19 V
I
S
Supply Current V
CM
= 9V, No load 6.0 7.5 mA
PSRR Power Supply Rejection Ratio Supply is moved from 4.5V to 19V 60 75 dB
DYNAMIC PERFORMANCE
SR Slew Rate (Note 7) 1V V
OUTx
17V, 20% to 80% 100 V/µs
t
S
Settling to +0.1% (Note 8) A
V
= +1, V
OUTx
= 2V step,
R
L
= 1k1k (probe), C
L
= 1.5pF
100 ns
BW -3dB Bandwidth R
L
= 1kC
L
= 1.5pF 60 MHz
GBWP Gain-Bandwidth Product A
V
= -10, R
F
= 1kR
G
= 100
R
L
= 1k1k (probe), C
L
= 1.5pF
32 MHz
PM Phase Margin A
V
= -10, R
F
= 1kR
G
= 100
R
L
= 1k1k (probe), C
L
= 1.5pF
50 °
CS Channel Separation f = 5MHz 90 dB
NOTES:
6. Measured over -40°C to +85°C ambient operating temperature range. See the typical TCV
OS
production distribution shown in
the “Typical Performance Curves” on page 6.
7. Typical slew rate is an average of the slew rates measured on the rising (20% to 80%) and the falling (80% to 20%) edges
of the output signal.
8. Settling time measured as the time from when the output level crosses the final value on rising/falling edge to when the output
level settles within a ±0.1% error band. The range of the error band is determined by: Final Value(V)±[Full Scale(V)*0.1%].
EL5211T
6
FN6893.0
May 12, 2010
Typical Performance Curves
FIGURE 3. INPUT OFFSET VOLTAGE DISTRIBUTION FIGURE 4. INPUT OFFSET VOLTAGE DRIFT (HMSOP)
FIGURE 5. INPUT OFFSET VOLTAGE DRIFT (DFN) FIGURE 6. INPUT OFFSET VOLTAGE vs TEMPERATURE
FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE FIGURE 8. OUTPUT HIGH VOLTAGE vs TEMPERATURE
V
S
= ±5V
T
A
= +25°C
TYPICAL
PRODUCTION
DISTRIBUTION
0
50
100
150
200
250
300
350
400
450
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
INPUT OFFSET VOLTAGE (mV)
QUANTITY (AMPLIFIERS)
0
1
2
3
4
5
6
7
8
9
10
2 6 10 14 18 22 26 30 34 38
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
V
S
= ±5V
-40°C to +85°C
TYPICAL
PRODUCTION
DISTRIBUTION
QUANTITY (AMPLIFIERS)
0
2
4
6
8
10
12
2 6 10 14 18 22 26 30 34 38
V
S
= ±5V
-40°C to +85°C
TYPICAL
PRODUCTION
DISTRIBUTION
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
QUANTITY (AMPLIFIERS)
-10
-5
0
5
10
-50 0 50 100 150
V
S
= ±5V
INPUT OFFSET VOLTAGE (mV)
TEMPERATURE (°C)
0
1
2
3
4
-50 0 50 100 150
INPUT BIAS CURRENT (nA)
V
S
= ±5V
TEMPERATURE (°C)
4.92
4.93
4.94
4.95
-50 0 50 100 150
V
S
= ±5V
I
OUT
= +5mA
OUTPUT HIGH VOLTAGE (V)
TEMPERATURE (°C)
P1-P3P4-P6P7-P9P10-P12P13-P15

EL5211TIYEZ-T7

Mfr. #:
Buy EL5211TIYEZ-T7
Manufacturer:
Renesas / Intersil
Description:
Operational Amplifiers - Op Amps EL5211TIYEZ 60MHZR2R INPUT-OUTPUT OPERATE
Lifecycle:
New from this manufacturer.
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