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IXBH2N250

P1-P3P4-P5
© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 2500 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M 2500 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 5 A
I
C110
T
C
= 110°C 2 A
I
CM
T
C
= 25°C, 1ms 13 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 47 I
CM
= 6 A
(RBSOA) Clamped Inductive Load V
CE
 2000 V
P
C
T
C
= 25°C 32 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in
Weight TO-247 6 g
TO-268 4 g
DS100160A(8/17)
IXBH2N250
IXBT2N250
G = Gate C = Collector
E = Emitter Tab = Collector
V
CES
= 2500V
I
C110
= 2A
V
CE(sat)
3.80V
High Voltage, High Gain
BIMOSFET
TM
Monolithic Bipolar MOS
Transistor
Features
High Blocking Voltage
Integrated Anti-parallel Diode
International Standard Packages
Low Conduction Losses
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generator
Capacitor Discharge Circuit
AC Switches
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
CE
= V
GE
2500 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 10 A
T
J
= 125C 100 μA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= 2A,
V
GE
= 15V, Note 1 3.15 3.80 V
T
J
= 125C 4.08 V
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXBH)
G
E
C (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH2N250
IXBT2N250
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 2A, V
CE
= 10V, Note 1 0.85 1.40 S
C
ies
145 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 8.7 pF
C
res
3.2 pF
Q
g
10.6 nC
Q
ge
I
C
= 2A, V
GE
= 15V, V
CE
= 1kV 0.8 nC
Q
gc
6.2 nC
t
d(on)
30 ns
t
r
180 ns
t
d(off)
70 ns
t
f
182 ns
t
d(on)
30 ns
t
r
280 ns
t
d(off)
74 ns
t
f
178 ns
R
thJC
3.90 °C/W
R
thCS
0.21 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching times, T
J
= 125°C
I
C
= 2A, V
GE
= 15V
V
CE
= 2kV, R
G
= 47
Resistive Switching times, T
J
= 25°C
I
C
= 2A, V
GE
= 15V
V
CE
= 2kV, R
G
= 47
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 2A, V
GE
= 0V, Note 1 2.4 V
t
rr
0.92 μs
I
RM
9.80 A
Q
RM
4.50 μC
I
F
= 2A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
TO-247 Outline
TO-268 Outline
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2017 IXYS CORPORATION, All Rights Reserved
IXBH2N250
IXBT2N250
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
4
8
12
16
20
24
28
0 4 8 121620242832
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
10V
15V
20V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 4A
I
C
= 2A
I
C
= 1A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
5 7 9 11 13 15 17 19 21 23 25
V
GE
- Volts
V
CE
- Volts
I
C
= 4A
T
J
= 25
o
C
1A
2A
Fig. 6. Input Admittance
0
1
2
3
4
5
6
7
8
9
34567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40
o
C
25
o
C
125
o
C
P1-P3P4-P5

IXBH2N250

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IGBT 2500V 5A 32W TO247
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