© 2017 IXYS CORPORATION, All Rights Reserved
IXBH2N250
IXBT2N250
IXYS REF: B_2N250 (2P) 6-16-09
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
0
50
100
150
200
250
300
350
400
450
1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 47Ω, V
GE
= 15V
V
CE
= 2KV
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
150
200
250
300
350
400
450
500
550
600
40 80 120 160 200 240 280
R
G
- Ohms
t
r
- Nanoseconds
20
25
30
35
40
45
50
55
60
65
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 2KV
I
C
= 4A, 2A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
280
320
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 47Ω, V
GE
= 15V
V
CE
= 2KV
I
C
= 4A
I
C
= 2A
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
0
40
80
120
160
200
240
280
320
1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
C
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 47Ω, V
GE
= 15V
V
CE
= 2KV
T
J
= 25
o
C, 125
o
C
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
50
100
150
200
250
300
350
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 47Ω, V
GE
= 15V
V
CE
= 2KV
I
C
= 2A
I
C
= 4A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
320
360
40 80 120 160 200 240 280
R
G
- Ohms
t
f
- Nanoseconds
30
60
90
120
150
180
210
240
270
300
t
d(off)
- Nanoseconds
t
f
t
d(off
)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 2KV
I
C
= 4A
I
C
= 2A
