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DMP1022UFDE-7

P1-P3P4-P6P7-P8
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
1 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
I
D
Max
T
A
= +25°C
-12V
16mΩ @ V
GS
= -4.5V
-9.1A
21.5mΩ @ V
GS
= -2.5V
-7.9A
26mΩ @ V
GS
= -1.8V
-7.0A
32mΩ @ V
GS
= -1.5V
-6.3A
Description
This MOSFET is designed specifically for use in battery management
applications.
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Quantity per reel
DMP1022UFDE-7
P4
7
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2011
~
2015
2016
2017
2018
2019
2020
2021
2022
2023
Code
Y
~
C
D
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Bottom View
Pin Out
ESD PROTECTED
Internal Schematic
P4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
P4
YM
D
D
D
D
1
2
6
5
S S G 34
U-DFN2020-6
Bottom View
Pin1
e4
D
S
G
Gate Protection
Diode
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
2 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-12
V
Gate-Source Voltage
V
GSS
±8
V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-9.1
-7.2
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-11.2
-9.0
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-90
A
Continuous Source-Drain Diode Current
T
A
= +25°C
T
C
= +25°C
I
S
-2.5
-7.1
A
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
I
SM
-50
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
189
°C/W
t<5s
123
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
61
°C/W
t<5s
40
Thermal Resistance, Junction to Case (Note 6)
Steady state
R
θJC
9.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
3 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12
—
—
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current (T
J
= +25°C)
I
DSS
—
—
-200
nA
V
DS
= -12V, V
GS
= 0V
Zero Gate Voltage Drain Current (T
J
= +55°C) (Note 8)
I
DSS
—
—
-2
µA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±2
µA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.35
—
-0.8
V
V
DS
= V
GS
, I
D
= -250μA
V
GS(th)
Temperature Coefficient
ΔV
GS(th)
/ΔT
J
—
2.5
—
mV/°C
I
D
= -250μA
On-State Drain Current
I
D(ON)
-10
—
—
A
V
GS
= -4.5V, V
DS
< -5A
Static Drain-Source On-Resistance
R
DS(ON)
—
12
16
mΩ
V
GS
= -4.5V, I
D
= -8.2A
15
21.5
V
GS
= -2.5V, I
D
= -7.2A
20
26
V
GS
= -1.8V, I
D
= -6.6A
23
32
V
GS
= -1.5V, I
D
= -1A
80
160
V
GS
= -1.2V, I
D
= -1A
Forward Transfer Admittance
|Y
fs
|
—
12
—
S
V
DS
= -4V, I
D
= -8.2A
Diode Forward Voltage
V
SD
—
-0.8
-1.2
V
V
GS
= 0V, I
S
= -8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
2,953
—
pF
V
DS
= -4V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
756
—
Reverse Transfer Capacitance
C
rss
—
678
—
Gate Resistance
R
g
—
8.6
18
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
—
28.4
42.6
nC
V
GS
= -5V, V
DS
= -4, I
D
= -10A
Total Gate Charge
Q
g
—
25.3
38
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -10A
Gate-Source Charge
Q
gs
—
2.3
—
Gate-Drain Charge
Q
gd
—
7.2
—
Turn-On Delay Time
t
D(on)
—
20
30
nS
V
DS
= -4V, V
GS
= -4.5V,
R
G
= 1Ω, R
L
= 0.4Ω, I
D
= -9.8A
Turn-On Rise Time
t
r
—
28
42
Turn-Off Delay Time
t
D(off)
—
117
176
Turn-Off Fall Time
t
f
—
93
139
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
—
-0.8
-1.2
V
V
GS
= 0V, I
S
= -9.8A
Continuous Source-Drain Diode Current (Note 6)
I
S
—
—
-2.5
A
T
A
= +25°C
—
—
-7.1
T
C
= +25°C
Pulse Diode Forward Current (Note 8)
I
SM
—
—
-50
—
Bodyy Diode Reverse Recovery Time (Note 8)
t
rr
—
28
56
nS
I
S
= -9.8A, dI/dt = 100A/μs
Reverse Recovery Fall Time
t
a
—
10
—
Reverse Recovery Rise Time
t
b
—
18
—
Body Diode Reverse Recovery Charge (Note 8)
Q
rr
—
13
26
nC
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
P1-P3P4-P6P7-P8

DMP1022UFDE-7

Mfr. #:
Buy DMP1022UFDE-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A
Lifecycle:
New from this manufacturer.
Delivery:
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