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DMP1022UFDE-7

P1-P3P4-P6P7-P8
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
4 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
DS
-I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0
10
20
30
40
50
60
70
80
90
100
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
P , PEAK TRANSIENT POIWER (W)
(PK)
Single Pulse
R = 61 C/W
R = r * R
T - T = P * R

JA
JA(t) (t) JA
J A JA(t)
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE
1
R (t)=r(t) * R
JA JA
R =61°C/W
Duty Cycle, D=t1/ t2
JA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
5 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
0
5
10
15
20
25
30
-V , DRAIN -SOURCE VOLTAGE(V)
Fig. 4 Typical Output Characteristics
DS
0 1 2 3 4 5
-I , DRAIN CURRENT (A)
D
V = -1.5V
GS
V = -1.2V
GS
V = -1.8V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -4.5V
GS
V = -8.0V
GS
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0 2.5 3.0
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 5 Typical Transfer Characteristics
-I , DRAIN CURRENT (A)
D
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V = -5.0V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R ,DRAIN-SOURCE ON-RESISTANCE( )
DS(ON)
0
0.005
0.010
0.015
0.020
0.025
0.030
0 4 8 12 16 20
-I , DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE( )
DS(ON)
V = -4.5V
GS
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 8 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (Normalized)
DS(ON)
0
0.01
0.02
0.03
0.04
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 9 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -4.5V
I = A
GS
D
-10
V = .5V
I = A
GS
D
-2
-5
DMP1022UFDE
Datasheet number: DS35477 Rev. 11 - 2
6 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP1022UFDE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
A
V , GATE THRESHOLD VOLTAGE(V)
GS(TH)
0
4
8
12
16
20
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
SD
-I , SOURCE CURRENT (A)
S
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
0 3 6 9 12 15
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
DS
C , JUNCTION CAPACITANCE (pF)
T
C
oss
C
rss
f = 1MHz
C
iss
100
1,000
10,000
100,000
0 2 4 6 8 10 12
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
DS
-I , LEAKAGE CURRENT (nA)
DSS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
Q , TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
g
V , GATE-SOURCE VOLTAGE (V)
GS
P1-P3P4-P6P7-P8

DMP1022UFDE-7

Mfr. #:
Buy DMP1022UFDE-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A
Lifecycle:
New from this manufacturer.
Delivery:
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