W78C438C
- 10 -
5.4 Newly Added Special Function Registers
The W78C438C uses four newly defined special function registers, which are described in Table 4. To
read/write these registers, use the "MOV direct" or "read-modify-write" instructions.
REGISTER ADDR. FUNCTION LENGTH
R/W
TYPE
VALUE AFTER
RESET
1 HB A1H
During the execution of "MOVX @Ri,"
the content of HB is output to AP6.
8 R/W 00H
2 EPMA A2H
EPMA.7 determines functions of AP7.
EPMA.3
EPMA.0 determine values of
AP7<3:0> when EPMA.7 is "0."
8 R/W 70H
3 P8 A6H The content of P8 is output to port 8. 8 R/W 0FFH
4 XICON C0H
The bits of XICON determine/show the
functions/status of
INT2
INT3
. Bit-
addressable.
8 R/W 00H
Table 4. Newly Added Special Function Registers of the W78C438C
Notes:
1. The instructions used to access these nonstandard registers may cause assembling errors with respect to the 2500 A. D.
assembler, but these errors can be ignored by adding directive ".RAMCHK OFF" ahead these instructions.
2. In the newly added SFR of W78C438C, only XICON register is bit-addressable.
5.5 Power Reduction Function
The W78C438C supports power reduction just as the W78C32 does. The following table shows the
status of the external pins during the idle and power-down modes.
FUNCTION
ALE,
PSEN
P0
P3, P8
DP4 AP5, AP6 AP7
Idle 1 1 Port Data Floating Address Note
Power Down 0 0 Port Data Floating Address Note
Note: AP7 is either 0 or a value decoded by AP6<7:6>, depending on the value of EPMA.7.
W78C438C
Publication Release Date: March 10, 2010
- 11 - Revision A7
5.6 Programming Difference
The W78C438C is programmed in the same way as the W78C32, except that the external data RAM
is accessed by a "MOVX @Ri" instruction. To support address paging, there is an additional 8-bit SFR
"HB" (high byte), which is a nonstandard register, at address 0A1H. During execution of the "MOVX
@Ri" instruction, the contents of HB are output to AP6. The page address is modified by loading the
HB register with a new value before execution of the "MOVX @Ri" instruction. To read/write the HB
register, one can use the "MOV direct" instruction or "read-modify-write" instructions. The HB register
does not support bit-addressable instructions.
[Example]. MOV R1, #0H ; R1 = 0.
MOV 0A1H, #0FFH ; HB contents FFH.
MOVX A, @R1 ; Read the contents of external RAM location FF00H into
; Accumulator.
MOV 0A1H, #12H ; HB contents 12H.
MOVX @R1, A ; Copies the contents of Accumulator into external RAM
; location 1200H.
W78C438C
- 12 -
6. ELECRICAL CHARACTERISTICS
6.1 Absolute Maximum Ratings
PARAMETER SYMBOL MIN. MAX. UNIT
DC Power Supply
V
DDVSS
-0.3 +7.0 V
Input Voltage VIN VSS -0.3 VDD +0.3 V
Operating Temperature TOPR 0 70
°C
Storage Temperature TSTG -55 +150
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
6.2 D.C. Characteristics
(VDD VSS = 5V ±10%, TA = 25° C, FOSC = 20 MHz, unless otherwise specified.)
PARAMETER SYM. TEST CONDITIONS MIN. TYP. MAX. UNIT
Oper. Voltage VDD 4.5 5 5.5 V
Oper. Current IDD * No load - - 20 mA
Idle Current IIDLE Program idle mode - - 7 mA
Pwdn Current IPWDN Program power-down mode - - 50
µA
Input Leakage
Current
I
LK1
INT2
,
INT3
Internal pull-high
Notes 1, 2
-300 - +10
µA
Input Leakage
Current
I
LK2
RESET
Internal pull-low
Notes 1, 2
-10 - +300
µA
Input Leakage
Current
I
LK3
EA
, Port 0, DP4 Note 1
-10 - +10
µA
Input Leakage
Current
I
LK4 P1, P2, P3, P8 Note 1 -50 - +10
µA
Output Low Voltage VOL1 IOL1 = 2 mA (Port 1, 2, 3, 8) - - 0.45 V
Output High Voltage VOH1
I
OH1 = -100 µA (Port 1, 2, 3, 8)
2.4 - - V
Output Low Voltage VOL2
I
OL2 = 4mA Note 3
(ALE,
PSEN
, P0, DP4)
- - 0.45 V
Output High Voltage VOH2
I
OH2 = -400 µA Note 3
(ALE,
PSEN
, P0, DP4)
2.4 - - V
Output Low Voltage VOL3 IOL2 = 2 mA (AP5, AP6, AP7) - - 0.45 V
Output High Voltage VOH3
I
OH2 = -100 µA (AP5, AP6, AP7)
2.4 - - V
Input Voltage VILT
V
DD = 5V ±10%
0 - 0.8 V
Input Voltage VIHT
V
DD = 5V ±10%
2.4 -
Note 4
V

W78C438C40FL

Mfr. #:
Manufacturer:
Description:
IC MCU 8BIT ROMLESS 100QFP
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