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IRKT42/06A

P1-P3P4-P6P7-P9P10-P10
Parameters IRK.41 IRK.56 Units
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*) 100 135 A
I
TSM
@ 50Hz 850 1310 A
I
FSM
@ 60Hz 890 1370 A
I
2
t @ 50Hz 3.61 8.50 KA
2
s
@ 60Hz 3.30 7.82 KA
2
s
I
2
√t 36.1 85.0 KA
2
√s
V
RRM
range 400 to 1600 V
T
STG
- 40 to 125
o
C
T
J
- 40 to125
o
C
(*) As AC switch.
45 60 A
Major Ratings and Characteristics
45 A
60 A
ADD-A-pak
TM
GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.41, .56 SERIES
Bulletin I27131 rev. G 10/02
1
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRK.41, .56 Series
2
Bulletin I27131 rev. G 10/02
www.irf.com
I
T(AV)
Max. average on-state
current (Thyristors) 45 60 180
o
conduction, half sine wave,
I
F(AV)
Maximum average 45 60 T
C
= 85
o
C
forward current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle 850 1310 t=10ms No voltage
or non-repetitive on-state 890 1370 t=8.3ms reapplied
I
FSM
or forward current 715 1100 t=10ms 100% V
RRM
750 1150 t=8.3ms reapplied
940 1450 t=10ms T
J
= 25
o
C,
985 1520 t=8.3ms no voltage reapplied
I
2
t Max. I
2
t for fusing 3.61 8.56 t=10ms No voltage
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% V
RRM
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms T
J
= 25
o
C,
4.03 9.60 t=8.3ms no voltage reapplied
I
2
√t Max. I
2
√t for fusing (1) 36.1 85.6 KA
2
√s t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold 0.88 0.85 Low level (3)
voltage (2) 0.91 0.88 High level (4)
r
t
Max. value of on-state 5.90 3.53 Low level (3)
slope resistance (2) 5.74 3.41 High level (4)
V
TM
Max. peak on-state or I
TM
= π x I
T(AV)
V
FM
forward voltage I
FM
= π x I
F(AV)
di/dt Max. non-repetitive rate T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on I
TM
=π x I
T(AV)
, I
g
= 500mA,
current t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current 400 T
J
= 25
o
C, anode supply = 6V,resistive load
T
J
= T
J
max
T
J
= T
J
max
Parameters IRK.41 IRK.56 Units Conditions
100 135
(1) I
2
t for time t
x
= I
2
√t
x √t
x
(2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3) 16.7% x π x I
AV
< I < π x I
AV
(4) I > π x I
AV
On-state Conduction
I
H
Max. holding current 200
Initial T
J
= T
J
max.
150 A/µs
A
KA
2
s
V
mΩ
1.81 1.54 V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
, maximum V
RSM
, maximum V
DRM
, max. repetitive I
RRM
Voltage repetitive non-repetitive peak off-state voltage, I
DRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-V V VmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.41/ .56 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial T
J
= T
J
max.
T
J
= 25°C
IRK.41, .56 Series
3
Bulletin I27131 rev. G 10/02
www.irf.com
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
T
stg
Storage temp. range - 40 to 125
R
thJC
Max. internal thermal
resistance, junction 0.23 0.20 Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5) gate open circuit
15 mA T
J
= 125
o
C, gate open circuit
500 V/µs
Blocking
V
INS
RMS isolation voltage V
Triggering
P
GM
Max. peak gate power 10 10
P
G(AV)
Max. average gate power 2.5 2.5
I
GM
Max. peak gate current 2.5 2.5 A
-V
GM
Max. peak negative
gate voltage
4.0 T
J
= - 40°C
2.5 T
J
= 25°C
1.7 T
J
= 125°C
270 T
J
= - 40°C
150 mA T
J
= 25°C
80 T
J
= 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters IRK.41 IRK.56 Units Conditions
0.25 V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Parameters IRK.41 IRK.56 Units Conditions
Sine half wave conduction Rect. wave conduction
Devices Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
P1-P3P4-P6P7-P9P10-P10

IRKT42/06A

Mfr. #:
Buy IRKT42/06A
Manufacturer:
Vishay
Description:
SCR DBL 2SCR 600V 40A ADD-A-PAK
Lifecycle:
New from this manufacturer.
Delivery:
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