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1 - 4
20150910a
MDD 220
IXYS reserves the right to change limits, test conditions and dimensions.
I
FRSM
= 2x 450 A
I
FAVM
= 2x 270 A
V
RRM
= 1200-1800 V
High Power
Diode Modules
Features
• Direct copper bonded Al
2
O
3
ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
450
270
A
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
8500
9000
A
A
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
7500
8000
A
A
I
2
t
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
360000
340000
A
2
s
A
2
s
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
280000
260000
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
150
-40...+125
°C
°C
°C
V
ISOL
50/60 Hz, RMS t = 1 min
I
ISOL
< 1 mA t = 1 s
3000
3600
V~
V~
M
d
Mounting torque (M5)
Terminal connection torque (M8)
2.5 - 5
12 - 15
Nm
Nm
Weight
Typical including screws 320 g
3 1 2
V
RSM
V
RRM
Type
V V
1300 1200 MDD 220-12N1
1500 1400 MDD 220-14N1
1700 1600 MDD 220-16N1
1900 1800 MDD 220-18N1
Symbol Conditions Characteristics Values
I
RRM
V
R
= V
RRM
;
T
VJ
= T
VJM
40 mA
V
F
I
F
= 600 A; T
VJ
= 25°C 1.4 V
V
T0
r
t
For power-loss calculations only
T
VJ
= T
VJM
0.75
0.9
V
mW
R
thJC
R
thJK
per diode; DC current
per module other values
per diode; DC current see Fig. 6/7
per module
0.129
0.065
0.169
0.0845
K/W
K/W
K/W
K/W
Q
S
I
RM
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs 760
275
µC
A
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
E72873
