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MDD220-12N1
P1-P3
P4-P4
© 2015 IXYS All rights reser
ved
4 - 4
20150910a
MDD 220
IXYS reserves the right to change limits, test conditions and dimensions.
R
thJA
[K/W]
0.03
0.05
0.06
0.08
0.12
0.15
0.20
0.30
Circuit
B6
3x MDD220
0
0
200
400
0
100
150
200
50
500
1000
1500
2500
Fig.
5
Three phase rectifier bridge:
Po
wer dissipation versu
s direct
output current and ambient temperature
600
2000
10
-3
10
-2
10
-1
10
0
10
1
0.00
0.04
0.08
0.12
0.16
0.20
10
-3
10
-2
10
-1
10
0
10
1
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
Fig. 6
Transi
ent thermal impedance junctio
n to case (per diode)
Fig. 7
Transi
ent thermal impedance junction
to heatsink (per diode)
R
thJC
for various conducti
on angles d
:
DC
0.129
180°
0.131
120°
0.132
60°
0.132
30°
0.133
Constants for Z
thJC
calcula
tion:
1
0.0035
0.0099
2
0.0165
0.168
3
01091
0.456
R
thJK
for various conducti
on angles d:
DC
0.169
180°
0.171
120°
0.172
60°
0.172
30°
0.173
Constants for Z
thJK
calculati
on:
1
0.0035
0.0099
2
0.0165
0.168
3
0.1091
0.456
4
0.04
1.36
DC
30°
DC
30°
P1-P3
P4-P4
MDD220-12N1
Mfr. #:
Buy MDD220-12N1
Manufacturer:
Description:
Discrete Semiconductor Modules 220 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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