MDD220-12N1

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4 - 4
20150910a
MDD 220
IXYS reserves the right to change limits, test conditions and dimensions.
R
thJA
[K/W]
0.03
0.05
0.06
0.08
0.12
0.15
0.20
0.30
Circuit
B6
3x MDD220
0
0 200 400 0 100 150 20050
500
1000
1500
2500
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct 
output current and ambient temperature
600
2000
10
-3
10
-2
10
-1
10
0
10
1
0.00
0.04
0.08
0.12
0.16
0.20
10
-3
10
-2
10
-1
10
0
10
1
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
Fig. 6 Transient thermal impedance junction to case (per diode)
Fig. 7 Transient thermal impedance junction to heatsink (per diode)
R
thJC
for various conduction angles d
:
DC 0.129
180° 0.131
120° 0.132
60° 0.132
30° 0.133
Constants for Z
thJC
calculation:
1 0.0035 0.0099
2 0.0165 0.168
3 01091 0.456
R
thJK
for various conduction angles d:
DC 0.169
180° 0.171
120° 0.172
60° 0.172
30° 0.173
Constants for Z
thJK
calculation:
1 0.0035 0.0099
2 0.0165 0.168
3 0.1091 0.456
4 0.04 1.36
DC
30°
DC
30°

MDD220-12N1

Mfr. #:
Manufacturer:
Description:
Discrete Semiconductor Modules 220 Amps 1200V
Lifecycle:
New from this manufacturer.
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