BT134W-600
4Q Triac
14 June 2016 Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for
use in applications requiring high bidirectional transient and blocking voltage capability and high
thermal cycling performance.
2. Features and benefits
High blocking voltage capability
High noise immunity suitable for noisy applications
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
General purpose low power motor control
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 108 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 10 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 11 A
T
j
junction temperature - - 125 °C
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
- 5 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
- 8 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
- 11 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 9
- 30 70 mA
WeEn Semiconductors
BT134W-600
4Q Triac
BT134W-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 14 June 2016 2 / 16
Symbol Parameter Conditions Min Typ Max Unit
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 11 - 5 15 mA
V
T
on-state voltage I
T
= 2 A; T
j
= 25 °C; Fig. 12 - 1.2 1.5 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100 250 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 1 A; gate open circuit
- 50 - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 T2 main terminal 2
1 32
4
SC-73 (SOT223)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT134W-600 SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number Marking code
BT134W-600 BT134W 60
WeEn Semiconductors
BT134W-600
4Q Triac
BT134W-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 14 June 2016 3 / 16
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 108 °C; Fig. 1; Fig. 2;
Fig. 3
- 1 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 10 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 11 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.5 A²s
- 50 A/µs
- 50 A/µs
- 50 A/µs
dI
T
/dt rate of rise of on-state
current
I
G
= 0.2 A
- 10 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
aaa-011029
4
8
12
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
2
6
10
f = 50 Hz; T
sp
= 108 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
aaa-011027
0
0.4
0.8
1.2
-50 0 50 100 150
T
s
p
(°C)
T
(
R
M
S
)
(A)
108 °C
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values

BT134W-600E,115

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE-7 TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
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