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BT134W-600E,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
WeEn Semiconductors
BT134W-600
4Q Triac
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
7 / 16
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 7. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 8. Printed circuit board pad area: SOT223
WeEn Semiconductors
BT134W-600
4Q Triac
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
8 / 16
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
-
5
35
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
-
8
35
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
-
11
35
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 9
-
30
70
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 10
-
7
20
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 10
-
16
30
mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 10
-
5
20
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 10
-
7
30
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 11
-
5
15
mA
V
T
on-state voltage
I
T
= 2 A; T
j
= 25 °C;
Fig. 12
-
1.2
1.5
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
-
0.7
1
V
V
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 13
0.25
0.4
-
V
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100
250
-
V/µs
dV
com
/dt
rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 1 A; gate open circuit
-
50
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 1.5 A; V
D
= 600 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
-
2
-
µs
WeEn Semiconductors
BT134W-600
4Q Triac
BT134W-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
14 June 2016
9 / 16
T
j
(°C)
-60
140
90
-10
40
003aae967
1
2
3
0
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
I
GT
I
GT
(25
°C)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 9. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-60
140
90
-10
40
003aae964
1
2
3
0
I
L
I
L
(25 °C)
Fig. 10. Normalized latching current as a function of
junction temperature
T
j
(°C)
-60
140
90
-10
40
003aae966
1.0
0.5
1.5
2.0
0
I
H
I
H
(25 °C)
Fig. 11. Normalized holding current as a function of
junction temperature
V
T
(V)
0
2
1.5
0.5
1
003aae963
1
0.5
1.5
2
I
T
(A)
0
(1)
(2)
(3)
V
o
= 1.00 V; R
s
= 0.21 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 12. On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BT134W-600E,115
Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE-7 TRIAC
Lifecycle:
New from this manufacturer.
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