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STK554U362C-E

P1-P3P4-P6P7-P9P10-P12P13-P15
© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number :
December 2016 - Rev. 2 STK554U362C-E/D
www.onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
STK554U362C-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP
module. Output stage uses IGBT / FRD technology and implements Under
Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault
Detection output flag. Internal Boost diodes are provided for high side gate
boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control inputs and status outputs are at low voltage levels directly
compatible with microcontrollers.
A single power supply drive is enabled through the use of bootstrap
circuits for upper power supplies
Built-in dead-time for shoot-thru protection
Having open emitter output for low side IGBTs ; individual shunt
resistor per phase for OCP
Externally accessible embedded thermistor for substrate temperature
measurement
Shutdown function ‘ITRIP’ to disable all operations of the 6 phase
output stage by external input
Certification
UL1557 (File number : E339285)
Specifications
Absolute Maximum Ratings
at Tc = 25C
Parameter Symbol Remarks Ratings Unit
Supply voltage
V
CC
V+ to U-, V-, W-, surge < 500 V *1 450 V
Collector-emitter voltage
V
CE
V+ to U, V, W or U, V, W, to U-, V-, W- 600 V
Output current Io
V+,U-,V-,W-,U,V,W terminal current ±10 A
V+,U-,V-,W-,U,V,W terminal current, Tc = 100C
±7 A
Output peak current Iop V+,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms ±20 A
Pre-driver voltage VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, V
DD
to V
SS
*2
20 V
Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3
0.3 to V
DD
V
FLTEN terminal voltage VFLTEN FLTEN terminal
0.3 to V
DD
V
Maximum power dissipation Pd IGBT per 1 channel 30 W
Junction temperature Tj IGBT, FRD, Pre-Driver IC 150
C
Storage temperature Tstg
40 to +125 C
Operating case temperature Tc IPM case
40 to +100 C
Tightening torque A screw part *3 0.9 Nm
Withstand voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between + and U- (V-, W-) terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V
DD
to V
SS
terminal voltage.
*3 : Flatness of the heat-sink should be less than 50 m to +100 m.
*4 : Test conditions : AC 2500 V, 1 second
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
PACKAGE PICTURE
SIP29 56x21.8
STK554U362C-E
www.onsemi.com
2
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter Symbol Conditions
Tes t
circuit
Min Typ Max Unit
Power output section
Collector-emitter cut-off current
I
CE
V
CE
= 600 V
Fig.1
- - 100 μA
Bootstrap diode reverse current IR(BD) VR(BD) = 600 V - - 100 μA
Collector to emitter saturation voltage
V
CE
(SAT)
Io = 10 A, Tj = 25C
Fig.2
- 1.6 2.2
V
Io = 5 A, Tj = 100C
1.35 -
Diode forward voltage
V
F
Io = 10 A, Tj = 25C
Fig.3
- 1.6 2.1
V
Io = 5 A, Tj = 100C
1.3 -
Junction to case thermal resistance
θj-c(T) IGBT
-
- - 4
C/W
θj-c(D) FWD - - 5
Control (Pre-driver) section
Pre-driver power dissipation ID
VD1, 2, 3 = 15 V
Fig.4
- 0.08 0.4
mA
VD4 = 15 V - 1.6 4
High level Input voltage Vin H
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to V
SS
-
2.5 - - V
Low level Input voltage Vin L
-
- - 0.8 V
Logic 1 input leakage current I
IN+
VIN = +3.3 V
-
- 100 143 μA
Logic 0 input leakage current I
IN-
VIN = 0 V
-
- - 2 μA
FLTEN terminal sink current IoSD FAULT : ON / VFLTEN = 0.1 V - - 2 - mA
FLTEN clearance delay time FLTCLR
From time fault condition clear
- 1.3 1.65 2 ms
FLTEN Threshold
VEN+ VEN rising - - - 2.5 V
VEN- VEN falling - 0.8 - - V
ITRIP threshold voltage VITRIP ITRIP(16) to VSS(29) - 0.44 0.49 0.54 V
ITRIP to shutdown propagation delay t
ITRIP
- 340 550 800 ns
ITRIP blanking time t
ITRIPBL
- 250 350 - ns
V
CC
and V
BS
supply undervoltage
protection reset
V
CCUV+
V
BSUV+
- 10.5 11.1 11.7 V
V
CC
and V
BS
supply undervoltage
protection set
V
CCUV-
V
BSUV-
- 10.3 10.9 11.5 V
V
CC
and V
BS
supply undervoltage
hysteresis
V
CCUVH
V
BSUVH
- 0.14 0.2 - V
Thermistor for substrate temperature
Monitor
Rt
Resistance between
TH(27) and VSS(29)
- 42.3 47 51.7 kΩ
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
STK554U362C-E
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3
Parameter Symbol Conditions
Tes t
circuit
Min Typ Max Unit
Switching Character
Switching time
t ON
Io = 10 A
Inductive load
Fig.5
- 0.4 -
μs
t OFF - 0.65 -
Turn-on switching loss Eon
Ic = 5 A, V
+
= 300 V,
V
DD
= 15 V, L = 3.9 mH
Tc = 2 5 C
Fig.5
- 145 - μJ
Turn-off switching loss Eoff - 91 - μJ
Total switching loss Etot - 236 - μJ
Turn-on switching loss Eon
Ic = 5A, V
+
= 300 V,
V
DD
= 15 V, L = 3.9 mH
Tc = 100C
Fig.5
- 171 - μJ
Turn-off switching loss Eoff - 139 - μJ
Total switching loss Etot - 310 - μJ
Diode reverse recovery energy Erec
I
F
= 5 A, V
+
= 400 V, V
DD
= 15 V,
L = 3.9 mH, Tc = 100C
- - 12 - μJ
Diode reverse recovery time Trr - - 54 - ns
Reverse bias safe operating area RBSOA
Io = 20 A, V
CE
= 450 V
- Full square- -
Short circuit safe operating area SCSOA
V
CE
= 400 V, Tc = 100C
- 4 - - μs
Allowable offset voltage slew rate dv/dt
Between U (V, W) to
U- (V-, W-)
-
50
- 50 V/ns
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
Notes
1. The pre-drive power supply low voltage protection has approximately 200 mV of hysteresis and operates as follows.
Upper side ：The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will
continue till the input signal will turn ‘low’.
Lower side ：The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal
voltage.
2. When assembling the IPM on the heat sink the tightening torque range is 0.6 Nm to 0.9 Nm.
3. The pre-drive low voltage protection protects the device when the pre-drive supply voltage falls due to an operating
malfunction.
4. When use the over-current protection with external shunt resistor, please set the current protection level to be equal to or less than the
rating of output peak current (Iop).
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P12P13-P15

STK554U362C-E

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Manufacturer:
ON Semiconductor
Description:
IC BRIDGE DRIVER PAR 29SIP
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