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IRFIZ48NPBF

P1-P3P4-P6P7-P9
IRFIZ48NPbF
V
DSS
55V
R
DS(on)
0.016
I
D
40A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
1 2017-04-27
Absolute Maximum Ratings
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 40
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 29
I
DM
Pulsed Drain Current  210
P
D
@T
C
= 25°C Maximum Power Dissipation 54 W
Linear Derating Factor
0.36
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)  270
mJ
I
AR
Avalanche Current  32 A
E
AR
Repetitive Avalanche Energy 5.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
G D S
Gate Drain Source
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
TO-220 Full-Pak
Base Part Number Package Type
Standard Pack
Orderable Part Number
Form Quantity
IRFIZ48NPbF
TO-220 Full-Pak Tube 50 IRFIZ48NPbF
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 2.8
R
JA
Junction-to-Ambient ––– 65
°C/W
G
D
S
IRFIZ48NPbF
2 2017-04-27
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V,starting T
J
= 25°C, L = 530µH, R
G
= 25, I
AS
= 32A (See fig. 12)
I
SD
32A, di/dt 250A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRFZ48N data and test conditions.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.016

V
GS
= 10V, I
D
= 22A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 22 ––– ––– S V
DS
= 25V, I
D
= 32A
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 89
nC
I
D
= 32A
Q
gs
Gate-to-Source Charge ––– ––– 20 V
DS
= 44V
Q
gd
Gate-to-Drain Charge ––– ––– 39
V
GS
= 10V , See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 11 –––
ns
V
DD
= 28V
t
r
Rise Time ––– 78 –––
I
D
=32A
t
d(off)
Turn-Off Delay Time ––– 32 –––
R
G
= 5.1
t
f
Fall Time ––– 48 –––
R
D
= 0.85See Fig. 10
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 1900 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 620 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 270 –––
ƒ = 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 49
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 210
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 22A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 94 140 ns
T
J
= 25°C ,I
F
= 32A
Q
rr
Reverse Recovery Charge ––– 360 540 nC
di/dt = 100A/µs 
IRFIZ48NPbF
3 2017-04-27
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
C
A
4.5V
0.1
1
10
100
1000
0.1 1 10 100
4.5V
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 175°C
C
A
0.1
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 53A
D
P1-P3P4-P6P7-P9

IRFIZ48NPBF

Mfr. #:
Buy IRFIZ48NPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 36A 16mOhm 59.3nC
Lifecycle:
New from this manufacturer.
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