IRFIZ48NPBF

P1-P3 P4-P6 P7-P9



IRFIZ48NPbF

4 2017-04-27

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage



Fig 8. Maximum Safe Operating Area

Fig. 7 Typical Source-to-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

0

1000

2000

3000

4000

110100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

020406080100

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

I = 32A

V = 44V

V = 28V

D

DS

DS

0.1

1

10

100

1000

0.2 0.6 1.0 1.4 1.8 2.2 2.6

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms



IRFIZ48NPbF

5 2017-04-27

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

25 50 75 100 125 150 175

0

10

20

30

40

50

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes :

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)



IRFIZ48NPbF

6 2017-04-27



Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

R

G

I

AS

0.01



t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

t

p

V

(BR)DSS

I

AS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Gate Charge Waveform

0

100

200

300

400

500

600

700

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

I

TOP 13A

22A

BOTTOM 32A

DD

D

P1-P3 P4-P6 P7-P9

IRFIZ48NPBF

Mfr. #:

Buy IRFIZ48NPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT 55V 36A 16mOhm 59.3nC

Lifecycle:

New from this manufacturer.

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IRFIZ48NPBF