4
AT49BV/LV4096A
1618F–FLASH–11/02
timings are used. The address locations used in the command sequences are not
affected by entering the command sequences.
RESET: A RESET input pin is provided to ease some system applications. When
RESET
is at a logic high level, the device is in its standard operating mode. A low level
on the RESET
input halts the present device operation and puts the outputs of the
device in a high-impedance state. When a high level is reasserted on the RESET
pin,
the device returns to the read or standby mode, depending upon the state of the control
inputs. By applying a 12V ± 0.5V input signal to the RESET
pin, the boot block array can
be reprogrammed even if the boot block program lockout feature has been enabled (see
“Boot Block Programming Lockout Override” section).
ERASURE: Before a byte or word can be reprogrammed, it must be erased. The erased
state of memory bits is a logic “1”. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by using the Sector Erase
commands.
CHIP ERASE: The entire device can be erased at one time by using the 6-byte chip
erase software code. After the chip erase has been initiated, the device will internally
time the erase operation so that no external clocks are required. The maximum time to
erase the chip is t
EC
.
If the boot block lockout has been enabled, the chip erase will not erase the data in the
boot block; it will erase the main memory block and the parameter blocks only. After the
chip erase, the device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into four
sectors that can be individually erased. There are two 4K word parameter block sec-
tions, one boot block, and the main memory array block. The Sector Erase command is
a six-bus cycle operation. The sector address is latched on the falling WE
edge of the
sixth cycle while the 30H data input command is latched at the rising edge of WE
. The
sector erase starts after the rising edge of WE
of the sixth cycle. The erase operation is
internally controlled; it will automatically time to completion. Whenever the main memory
block is erased and reprogrammed, the two parameter blocks should be erased and
reprogrammed before the main memory block is erased again. Whenever a parameter
block is erased and reprogrammed, the other parameter block should be erased and
reprogrammed before the first parameter block is erased again. Whenever the boot
block is erased and reprogrammed, the main memory block and the parameter blocks
should be erased and reprogrammed before the boot block is erased again.
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to
a logic “0”) on a byte-by-byte or word-by-word basis. Programming is accomplished via
the internal device command register and is a four-bus cycle operation. The device will
automatically generate the required internal program pulses.
Any commands written to the chip during the embedded programming cycle will be
ignored. If a hardware reset happens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0” cannot be programmed back
to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after
the specified t
BP
cycle time. The Data Polling feature may also be used to indicate the
end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block
that has a programming lockout feature. This feature prevents programming of data in
the designated block once the feature has been enabled. The size of the block is 8K
words. This block, referred to as the boot block, can contain secure code that is used to
bring up the system. Enabling the lockout feature will allow the boot code to stay in the
device while data in the rest of the device is updated. This feature does not have to be
5
AT49BV/LV4096A
1618F–FLASH–11/02
activated; the boot block’s usage as a write-protected region is optional to the user. The
address range of the boot block is 00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can no longer be erased or pro-
grammed when input levels of 5.5V or less are used. Data in the main memory block
can still be changed through the regular programming method. To activate the lockout
feature, a series of six program commands to specific addresses with specific data must
be performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if
programming of the boot block section is locked out. When the device is in the software
product identification mode (see Software Product Identification Entry and Exit sections)
a read from the following address location will show if programming the boot block is
locked out – 00002H. If the data on I/O0 is low, the boot block can be programmed; if
the data on I/O0 is high, the program lockout feature has been enabled and the block
cannot be programmed. The software product identification exit code should be used to
return to standard operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE: The user can override the
boot block programming lockout by taking the RESET
pin to 12 volts during the entire
chip erase, sector erase or word programming operation. When the RESET
pin is
brought back to TTL levels, the boot block programming lockout feature is again active.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and
manufacturer as Atmel. It may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct
programming algorithm for the Atmel product.
For details, see “Operating Modes” (for hardware operation) or “Software Product Identi-
fication Entry/Exit” on page 12. The manufacturer and device codes are the same for
both modes.
DATA
POLLING: The AT49BV/LV4096A features Data Polling to indicate the end of a
program cycle. During a program cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once the program cycle has been
completed, true data is valid on all outputs and the next cycle may begin. During a chip
or sector erase operation, an attempt to read the device will give a “0” on I/O7. Once the
program or erase cycle has completed, true data will be read from the device. Data
Poll-
ing may begin at any time during the program cycle.
TOGGLE BIT: In addition to Data
Polling, the AT49BV/LV4096A provides another
method for determining the end of a program or erase cycle. During a program or erase
operation, successive attempts to read data from the device will result in I/O6 toggling
between one and zero. Once the program cycle has completed, I/O6 will stop toggling
and valid data will be read. Examining the toggle bit may begin at any time during a pro-
gram cycle.
HARDWARE DATA PROTECTION: Hardware features protect against inadvertent pro-
grams to the AT49BV/LV4096A in the following ways: (a) V
CC
sense: if V
CC
is below
1.8V (typical), the program function is inhibited. (b) V
CC
power on delay: once V
CC
has
reached the V
CC
sense level, the device will automatically time out 10 ms (typical)
before programming. (c) Program inhibit: holding any one of OE
low, CE high or WE
high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the
WE
or CE inputs will not initiate a program cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V power supply, the address and
control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affect-
ing the operation of the device. The I/O lines can only be driven from 0 to V
CC
+ 0.6V.
6
AT49BV/LV4096A
1618F–FLASH–11/02
Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex).
The ADDRESS FORMAT in each bus cycle is as follows: A15 - A0 (Hex), A-1, and A15 - A17 (Don’t Care).
2. The boot sector has the address range 00000H to 01FFFH.
3. Either one of the Product ID Exit commands can be used.
4. SA = sector addresses: (A17 - A0)
SA = 01XXX for BOOT BLOCK
SA = 02XXX for PARAMETER BLOCK 1
SA = 03XXX for PARAMETER BLOCK 2
SA = 3FXXX for MAIN MEMORY ARRAY
Command Definition (in Hex)
(1)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read 1 Addr D
OUT
Chip Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Sector Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA
(4)
30
Byte/Word Program 4 5555 AA 2AAA 55 5555 A0 Addr D
IN
Boot Block Lockout
(2)
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entry 3 5555 AA 2AAA 55 5555 90
Product ID Exit
(3)
3 5555 AA 2AAA 55 5555 F0
Product ID Exit
(3)
1xxxxF0
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on RESET
with Respect to Ground...................................-0.6V to +13.5V

AT49BV4096A-70TI

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
NOR Flash 4M bit
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet