APTM20DAM05G Datasheet APTM20DAM05G | P1-P3

APTM20DAM05G

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Rev 3 July, 2006

www.microsemi.com 1

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6

G2

S2

VB US

0/VBUS

CR1

OUT

Q2

OUT

0/VBUSVBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

S

ymbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 200 V

T

c

= 25°C 317

I

D

Continuous Drain Current

T

c

= 80°C 237

I

DM

Pulsed Drain current 1268

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 6

mΩ

P

D

Maximum Power Dissipation T

c

= 25°C 1136 W

I

AR

Avalanche current (repetitive and non repetitive) 89 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 2500

mJ

V

DSS

= 200V

R

DSon

= 5mΩ typ @ Tj = 25°C

I

D

= 317A @ Tc = 25°C

Applicatio

n

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

Features

• Power MOS 7

®

MOSFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate c harge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- M5 power connectors

• High level of integration

Benefits

• Outsta ndi ng performance at hi gh freque nc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Low profile

• RoHS Compliant

B

oost choppe

r

MOSFET Power Module

APTM20DAM05G

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Rev 3 July, 2006

www.microsemi.com 2

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6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 200V T

j

= 25°C 400

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 160V T

j

= 125°C 2000

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 158.5A

5 6

mΩ

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 10mA 3 5 V

I

GS S

Gate – Source Leakage Current V

GS

= ±30 V, V

DS

= 0V ±200 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

is s

Input Capacitance 27.4

C

oss

Output Capacitance 8.72

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

0.38

nF

Q

g

Total gate Charge 448

Q

gs

Gate – Source Charge 172

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 100V

I

D

= 300A

188

nC

T

d(on)

Tur n-on Delay Ti me 28

T

r

Rise Time 56

T

d(off)

Turn-off Delay Time 81

T

f

Fall Time

Inductive switching @ 125°C

V

GS

= 15V

V

Bus

= 133V

I

D

= 300A

R

G

= 1.2Ω

99

ns

E

on

Tur n-on Switchi ng Energy 1852

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 15V, V

Bus

= 133V

I

D

= 300A,

R

G

= 1.2Ω 1820

µJ

E

on

Tur n-on Switchi ng Energy 2432

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 15V, V

Bus

= 133V

I

D

= 300A,

R

G

= 1.2Ω

2124

µJ

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage 200 V

T

j

= 25°C 350

I

RM

Maximum Reverse Leakage Current V

R

=200V

T

j

= 125°C 1000

µA

I

F

DCForward Current T

c

= 85°C 240 A

I

F

= 240A 1.1 1.15

I

F

= 480A 1.4 V

F

Diode Forward Voltage

I

F

= 240A T

j

= 125°C

0.9

V

T

j

= 25°C 31

t

rr

Reverse Recovery Time

T

j

= 125°C 60

ns

T

j

= 25°C 240

Q

rr

Reverse Recovery Charge

I

F

= 240A

V

R

= 133V

di/dt = 800A/µs

T

j

= 125°C 1000

nC

APTM20DAM05G

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Rev 3 July, 2006

www.microsemi.com 3

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6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

Transistor 0.11

R

thJC

Junction to Case Thermal Resistance

Diode 0.23

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500 V

T

J

Operating junction temperature range

-40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

To heatsink M6 3 5

Torque Mounting torque

For terminals M5 2 3.5

N.m

Wt Package Weight 280 g

SP6 Package outline (dimensions in mm)

See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTM20DAM05G

APTM20DAM05G

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