APTM20DAM05G
APTM20DAM05G
Rev 3 July, 2006
www.microsemi.com 6
6
Delay Times vs Current
td
(on)
td
(of f)
10
20
30
40
50
60
70
80
90
50 150 250 350 450 550
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
50 150 250 350 450 550
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
50 150 250 350 450 550
I
D
, Drain Current (A)
E
on
and E
off
(mJ)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100µH
E
on
E
off
E
off
2
2.5
3
3.5
4
4.5
5
5.5
6
0 2.5 5 7.5 10 12.5 15
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=300A
T
J
=125°C
L=100µH
Hard
Switching
ZCS
ZVS
0
50
100
150
200
250
300
350
30 70 110 150 190 230 270
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
V
DS
=133V
D=50%
R
G
=1.2Ω
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
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