Characteristics STPS5H100
2/10 DocID5388 Rev 12
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.51 x I
F(AV)
+ 0.02 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
RMS forward voltage 10 A
I
F(AV)
Average forward current, δ = 0.5 T
C
= 165 °C 5 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 10 µs, T
j
= 125 °C 515 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2.5 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
(1)
1. t
p
= 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
3.5 µA
T
j
= 125 °C 1.3 4.5 mA
V
F
(2)
2. t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
0.73
V
T
j
= 125 °C 0.57 0.61
T
j
= 25 °C
I
F
= 10 A
0.85
T
j
= 125 °C 0.66 0.71
dPtot
dTj
------- --------
1
Rth j a–()
----------- ---------------
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