BSO4420

P1-P3 P4-P6 P7-P8

2008-01-16

Page 1

BSO4420

OptiMOS

â

Small-Signal-Transistor

Product Summary

V

DS

30 V

R

DS

(

on

)

7.8 mΩ

I

D

13 A

Feature

• N-Channel

• Logic Level

• Very low on-resistance R

DS

(

on

)

• Excellent Gate Charge x R

DS

(

on

)

product (FOM)

• Avalanche rated

• dv/dt rated

• Ideal for fast switching applications

Type Package Ordering Code

BSO4420 SO 8 Q67042-S4027

Marking

4420

Maximum Ratings,at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

A

=25°C

I

D

13 A

Pulsed drain current

T

A

=25°C

I

D puls

52

Avalanche energy, single pulse

I

D

=13 A , V

DD

=25V, R

GS

=25Ω

E

AS

230 mJ

Reverse diode dv/dt

I

S

=13A, V

DS

=24V, di/dt=200A/µs, T

jmax

=150°C

dv/dt

6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

A

=25°C

P

tot

2.5 W

Operating and storage temperature T

j

,

T

st

g

-55... +150

°C

IEC climatic category; DIN IEC 68-1 55/150/56

2008-01-16

Page 2

BSO4420

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point R

thJS

- - 30 K/W

SMD version, device on PCB:

@ min. footprint; t ≤ 10 sec.

@ 6 cm

2

cooling area

1)

; t ≤ 10 sec.

R

thJA

-

-

-

-

110

50

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0V, I

D

=1mA

V

(BR)DSS

30 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=80µA

V

GS(th)

1.2 1.6 2

Zero gate voltage drain current

V

DS

=30V, V

GS

=0V, T

j

=25°C

V

DS

=30V, V

GS

=0V, T

j

=125°C

I

DSS

-

-

0.01

10

1

100

µA

Gate-source leakage current

V

GS

=20V, V

DS

=0V

I

GSS

- 1 100 nA

Drain-source on-state resistance

V

GS

=4.5V, I

D

=11A

R

DS(on)

- 9.3 10.9

mΩ

Drain-source on-state resistance

V

GS

=10V, I

D

=13A

R

DS(on)

- 6.7 7.8

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2008-01-16

Page 3

BSO4420

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

≥2*I

D

*R

DS(on)max

,

I

D

=11.6A

13.7 27.4 - S

Input capacitance C

iss

V

GS

=0, V

DS

=25V,

f=1MHz

- 1770 2213 pF

Output capacitance C

oss

- 740 925

Reverse transfer capacitance C

rss

- 165 206

Gate resistance R

G

- 1.3 - Ω

Turn-on delay time t

d

(

on

)

V

DD

=15V, V

GS

=10V,

I

D

=11A, R

G

=2.2Ω

- 9 13.5 ns

Rise time t

r

- 44 66

Turn-off delay time t

d

(

off

)

- 10 15

Fall time t

f

- 32 48

Gate Charge Characteristics

Gate to source charge Q

g

s

V

DD

=15V, I

D

=13A - 4.9 6.1 nC

Gate to drain charge Q

g

d

- 12.8 16

Gate charge total Q

g

V

DD

=15V, I

D

=13A,

V

GS

=0 to 5V

- 27 33.7

Output charge Q

oss

V

DS

=15V, I

D

=13A,

V

GS

=0

- 25 -

Gate plateau voltage V

(p

lateau

)

V

DD

=15V, I

D

=13A - 2.7 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

A

=25°C - - 3.6 A

Inverse diode direct current,

pulsed

I

SM

- - 52

Inverse diode forward voltage V

SD

V

GS

=0, |I

S

|=|I

F

| - 0.85 1.13 V

Reverse recovery time t

rr

V

R

=15V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 32 48 ns

Reverse recovery charge Q

rr

- 43.6 70 nC

P1-P3 P4-P6 P7-P8

BSO4420

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 30V 13A 8-SOIC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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