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BSO4420

P1-P3P4-P6P7-P8
2008-01-16
Page 4
BSO4420
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
W
2.8
BSO4420
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
1
2
3
4
5
6
7
8
9
10
11
12
A
14
BSO4420
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSO4420
I
D
R
D
S
(
o
n
)
=
V
D
DC
10 ms
1 ms
t
p
= 230.0µs
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
2
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO4420
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2008-01-16
Page 5
BSO4420
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
DS
0
4
8
12
16
20
24
A
32
BSO4420
I
D
V
GS
[V]
a
a 2.5
b
b 3.0
c
c 3.5
d
d 4.0
e
e 4.5
f
f 5.0
g
g 6.0
h
P
tot
= 2.5W
h 10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 4 8 12 16 20
A
26
I
D
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0.024
Ω
0.03
BSO4420
R
DS(on)
V
GS
[V] =
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
6.0
h
h
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
GS
0
10
20
30
40
A
60
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0 10 20 30 40 50
A
70
I
D
0
5
10
15
20
25
30
35
40
S
50
g
fs
2008-01-16
Page 6
BSO4420
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 13 A, V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
0.002
0.004
0.006
0.008
0.01
0.012
Ω
0.016
BSO4420
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
j
0
0.5
1
1.5
V
2.5
V
GS(th)
max.
typ.
min.
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-1
10
0
10
1
10
2
10
A
BSO4420
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0 5 10 15 20
V
30
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
rss
C
oss
P1-P3P4-P6P7-P8

BSO4420

Mfr. #:
Buy BSO4420
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 13A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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