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IRF640 - IRF640FP Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 200 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 18 18
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
=100°C 11 11
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 72 72
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 125 40 W
Derating factor 1.0 0.32 W/°C
dv/dt
(3)
3. I
SD
≤18A, di/dt ≤ 300A/µs, V
DD
≤ V
(BR)DSS
, Tj ≤ T
JMAX
Peak diode recovery voltage slope 5 5 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)
-- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
150
-65 to 150
°C
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case Max 1.0 3.12 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 °C/W
Rthc-sink Thermal resistance case-sink typ 0.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
18 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
280 mJ
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