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IRF640

P1-P3P4-P6P7-P9P10-P12P13-P14
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Electrical characteristics IRF640 - IRF640FP
4/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
200 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
± 100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 9A
0.15 0.18 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9A
711 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
1200
200
60
1560
260
80
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=160V, I
D
= 18A
V
GS
=10V
55
10
21
72 nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 100V, I
D
= 9A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 14)
13
27
17
35
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
fall time
cross-over time
V
DD
=160V, I
D
=18A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
21
25
50
27
32
65
ns
ns
ns
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IRF640 - IRF640FP Electrical characteristics
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Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 18 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 72 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=18A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=18A,
di/dt = 100A/µs,
V
DD
=50V, Tj=150°C
(see Figure 16)
240
1.8
15
ns
µC
A
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
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P1-P3P4-P6P7-P9P10-P12P13-P14

IRF640

Mfr. #:
Buy IRF640
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 200 Volt 18 Amp
Lifecycle:
New from this manufacturer.
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