PL580-35OC-R

(Preliminary)
38MHz to 320MHz Low Phase Noise VCXO
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 8/19/09 Page 4
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS SYMBOL MIN. MAX. UNITS
Supply Voltage V
DD
4.6 V
Input Voltage, dc V
I
-0.5 V
DD
+0.5 V
Output Voltage, dc V
O
-0.5 V
DD
+0.5 V
Storage Temperature T
S
-65 150
C
Ambient Operating Temperature* T
A
-40 85
C
Junction Temperature T
J
125
C
Lead Temperature (soldering, 10s) 260
C
ESD Protection, Human Body Model 2 kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.* Note: Operating Temperature is guaranteed by design for all parts
(COMMERCIAL and INDUSTRIAL), but tested for COMMERCIAL grade only.
2. Crystal Specifications
PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Crystal Resonator
Frequency
F
XTAL
Parallel Fundamental Mode 19 40 MHz
at VCON = 0V 17.7
at VCON = 1.65V 9.5
Crystal Loading Rating C
L (XTAL)
at VCON = 3.3V 5.4
pF
Crystal Pullability C
0
/C
1 (XTAL)
AT cut 250 -
Recommended ESR R
E
AT cut 30 Ω
Note: Crystal Loading rating: The listed numbers are for the IC only. Specify the crystal for the value at VCON = 1.65V and add the PCB & package
parasitic. A round number (i.e. 12pF) can be achieved by adding external capacitors. Try to add the same value to XIN and XOUT, and please note,
that frequency pulling and oscillator gain may decrease.
3. General Electrical Specifications
PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
38MHz<F
OUT
<100MHz 65/45/30
Supply Current, Dynamic
(with Loaded Outputs)
I
DD
LVPECL/
LVDS/
LVCMOS
100MHz<F
OUT
<320MHz 80/60/40
mA
Operating Voltage V
DD
2.97 3.63 V
Output Clock Duty Cycle
@ 50% V
DD
(LVCMOS)
@ 1.25V (LVDS)
@ V
DD
1.3V (LVPECL)
45 50 55 %
Short Circuit Current
50
mA
Note: LVCMOS output is not advised above 200MHz with 15pF load; and 320MHz with 10pF load.
(Preliminary)
38MHz to 320MHz Low Phase Noise VCXO
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 8/19/09 Page 5
4. Voltage Control Crystal Oscillator
PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
VCXO Stabilization Time * T
VCXOSTB
From power valid 10 ms
VCXO Tuning Range
F
XTAL
= 19 to 40MHz;
XTAL C
0
/C
1
< 250
0V VCON 3.3V
500 ppm
CLK Output Pullability
VCON=1.65V, 1.65V 200
ppm
VCXO Tuning
Characteristic
150 ppm/V
Pull Range Linearity 10 %
VCON Input Impedance 60 80 kΩ
VCON Modulation BW
0V VCON 3.3V, -3dB
25 kHz
Note: Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
5. Jitter Specifications
PARAMETERS CONDITIONS FREQUENCY MIN. TYP. MAX. UNITS
155.52MHz 0.4 0.5
Integrated Jitter RMS
With capacitive decoupling
between V
DD
and GND.
Integrated 12kHz to 20MHz
311.04MHz 0.4 0.5
ps
77.76MHz 2.5 4
155.52MHz 3 5
Period Jitter RMS
With capacitive decoupling
between V
DD
and GND.
Over 10,000 cycles.
311.04MHz 4 7
ps
77.76MHz 18 30
155.52MHz 20 30
Period Jitter Peak-to-Peak
With capacitive decoupling
between V
DD
and GND.
Over 10,000 cycles.
311.04MHz 25 35
ps
6. Phase Noise Specifications
PARAMETERS FREQ. @10Hz @100Hz @1kHz @10kHz @100kHz @1M @10M UNITS
77.76MHz -66 -96 -124 -134 -132 -145 -149
155.52MHz -62 -92 -120 -132 -128 -144 -150
Phase Noise
relative to
carrier (typical)
311.04MHz -59 -86 -116 -129 -124 -140 -148
dBc/Hz
Note: Phase Noise measured at VCON = 0V.
(Preliminary)
38MHz to 320MHz Low Phase Noise VCXO
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 8/19/09 Page 6
7. LVCMOS Electrical Characteristics
PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
I
OH
V
OH
= V
DD
-0.4V, V
DD
=3.3V 30 mA
Output Drive Current
I
OL
V
OL
= 0.4V, V
DD
= 3.3V 30 mA
Output Clock Rise/Fall Time 0.3V ~ 3.0V with 15 pF load 0.7 ns
Output Clock Rise/Fall Time 20%-80% with 50 Load 0.3 ns
8. LVDS Electrical Characteristics
PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Output Differential Voltage V
OD
247 355 454 mV
V
DD
Magnitude Change
V
OD
-50 50 mV
Output High Voltage V
OH
1.4 1.6 V
Output Low Voltage V
OL
0.9 1.1 V
Offset Voltage V
OS
1.125 1.2 1.375 V
Offset Magnitude Change
V
OS
R
L
= 100
(see figure)
0 3 25 mV
Power-off Leakage I
OXD
V
out
= V
DD
or GND
V
DD
= 0V
1 10
uA
Output Short Circuit Current I
OSD
-5.7 -8 mA
9. LVDS Switching Characteristics
PARAMETERS SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Differential Clock Rise Time t
r
0.2 0.7 1.0 ns
Differential Clock Fall Time t
f
R
L
= 100
C
L
= 10 pF
(see figure)
0.2 0.7 1.0 ns
OUT
OUT
V
OD
V
OS
50?
50?
OUT
V
DIFF
R
L
= 100?
C
L
= 10pF
C
L
= 10pF
LVDS Switching Test CircuitLVDS Levels Test Circuit LVDS Transistion Time Waveform
OUT
OUT
OUT
0V (Differential)
0V
20%
80%
20%
80%
t
R
t
F
V
DIFF

PL580-35OC-R

Mfr. #:
Manufacturer:
Description:
IC CLOCK VCXO LVPECL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union