NB4L858MFAR2G

NB4L858M
http://onsemi.com
4
Table 3. Table 3. ATTRIBUTES
Characteristics Value
ESD Protection Human Body Model
Machine Model
> 2000 V
>110 V
Moisture Sensitivity (Note 1) 32LQFP Level 2
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
Transistor Count 380
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply GND = 0 V 3.8 V
V
I
Positive Input GND = 0 V GND v V
I
v V
CC
3.8 V
V
INPP
Differential Input Voltage |D D| 3.8 V
I
IN
Input Current Through Internal R
T
(50 W
Resistor)
Static
Surge
45
80
mA
mA
I
OUT
Output Current Continuous
Surge
25
80
mA
mA
T
A
Operating Temperature Range LQFP32 40 to +85 °C
T
stg
Storage Temperature Range 65 to +150 °C
q
JA
Thermal Resistance (JunctiontoAmbient) 0 LFPM
500 LFPM
32 LQFP
32 LQFP
80
55
°C/W
°C/W
q
JC
Thermal Resistance (JunctiontoCase) 2S2P (Note 2) 32 LQFP 12 to 17 °C/W
T
sol
Wave Solder PbFree <3 sec @ 260°C 265 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
2. JEDEC standard 516, multilayer board 2S2P (2 signal, 2 power).
NB4L858M
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5
Table 5. DC CHARACTERISTICS, CLOCK INPUTS, CML OUTPUTS V
CC
= 2.3 V to 3.6 V, GND = 0 V T
A
= 40°C to +85°C
Symbol
Characteristic Min Typ Max Unit
I
CC
Power Supply Current 130 190 mA
V
outdiff
CML Differential Output Swing (Note 3) No Load
Loaded 50 W to V
CC
640 800
400
1000 mV
V
OH
Output HIGH Voltage (No Load) V
CC
40 V
CC
10 V
CC
mV
V
OL
Output LOW Voltage (No Load) V
CC
1000 V
CC
800 V
CC
650 mV
R
TOUT
Output Source Resistance Qx or Qx 40 50 60
W
V
IH
Input HIGH Voltage 1600 V
CC
mV
V
IL
Input LOW Voltage 1500 V
CC
100 mV
V
ID
Differential Input Voltage (V
IHD
V
ILD
) 100 1600 mV
R
TIN
Input Termination Resistance D
x
or D
x
to V
TDx
40 50 60
W
LVTTL CONTROL INPUT PINS
V
IH
Input HIGH Voltage (LVTTL Inputs) 2000 mV
V
IL
Input LOW Voltage (LVTTL Inputs) 800 mV
I
IH
Input HIGH Current (LVTTL inputs) 10 10
mA
I
IL
Input LOW Current (LVTTL Inputs) 10 10
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. CML outputs require 50 W receiver termination resistors to V
CC
for proper operation.
NB4L858M
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6
Table 6. AC CHARACTERISTICS V
CC
= 2.3 V to 3.6 V, GND = 0 V; (Note 4)
Symbol
Characteristic
40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
V
OUTPP
Output Voltage Amplitude (@ V
INPPmin
)
f
in
2 GHz
(See Figure 2) f
in
3 GHz
f
in
3.5GHz
280
235
170
365
310
220
280
235
170
365
310
220
280
235
170
365
310
220
mV
f
DATA
Maximum Operating Data Rate 3 3 3 Gb/s
t
PLH
,
t
PHL
Propagation Delay to Output Differential
D/D
to Q/Q 220 350 450 220 350 450 220 350 450
ps
t
SWiITCH
SELyx to Valid Qyx Output (Note 9) 0.5 1.0 0.5 1.0 0.5 1.0 ns
t
SKEW
Within Device Skew (Note 5)
Within Device Skew (Note 6)
Device to Device Skew (Note 9)
12
25
100
12
25
100
12
25
100
ps
t
JITTER
RMS Random Clock Jitter (Note 8) f
in
=2 GHz
f
in
=3 GHz
PeaktoPeak Data Dependent Jitter f
in
=2.5Gb/s
(Note 9) f
in
=3.2Gb/s
Crosstalk Induced RMS Jitter (Note 11)
0.5
1.0
2.0
10
0.5
0.5
1.0
5.0
10
0.5
0.5
1.0
2.0
10
0.5
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration)
100 800 100 800 100 800 mV
t
r
t
f
Output Rise/Fall Times @ 0.5 GHz Q
x
, Q
x
(20% 80%)
80 120 80 120 80 120 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measured by forcing V
INPP
(MIN) from a 50% duty cycle clock source. All loading with an external R
L
= 50 W to V
CC
. Input edge rates 40 ps
(20% 80%).
5. Worstcase difference between QA0 and QA1 from either DA0 or DA1 (or between QB0 and QB1 from either DB0 or DB1 respectively),
when both outputs come from the same input.
6. Worstcase difference between QA and QB outputs, when DA or DB inputs are shorted.
7. Additive RMS jitter with 50% duty cycle input clock signal.
8. Additive peaktopeak data dependent jitter with input NRZ data signal.
9. Device to device skew is measured between outputs under identical transition @ 0.5 GHz.
10.LVTTL/LVCMOS input edge rate less than 1.5 ns
11. Data taken on the same device under identical condition.
Figure 2. Output Voltage Amplitude (V
OUTPP
) versus Input Clock Frequency (fin) and Temperature
0
50
100
150
200
250
300
350
400
1 1.5 2 2.5 3 3.5
VOLTAGE (mV)
INPUT CLOCK FREQUENCY (GHz)
25°C
40°C
85°C

NB4L858MFAR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Analog & Digital Crosspoint ICs DD CLK/DATA 2X2 CRPT
Lifecycle:
New from this manufacturer.
Delivery:
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