IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 36A, V
CE
= 10V, Note 1 18 30 S
C
ie
s
2290 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 135 pF
C
res
50 pF
Q
g(on)
86 nC
Q
ge
I
C
= 36A, V
GE
= 15V, V
CE
= 0.5 • V
CES
14 nC
Q
gc
40 nC
t
d(on)
20 ns
t
ri
36 ns
E
on
0.80 mJ
t
d(off)
90 ns
t
fi
26 ns
E
of
f
0.47 0.80 mJ
t
d(on)
19 ns
t
ri
37 ns
E
on
1.60 mJ
t
d(off)
113 ns
t
fi
32 ns
E
off
0.70 mJ
R
thJC
0.25 °C/W
R
thCS
TO-220 0.50 °C/W
R
thCS
TO-247 0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= 36A, V
GE
= 15V
V
CE
= 400V, R
G
= 5
Note 2
Inductive load, T
J
= 150°C
I
C
= 36A, V
GE
= 15V
V
CE
= 400V, R
G
= 5
Note 2
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-263 Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1 - Gate
2,4 - Collector
3 - Emitter
TO-247 Outline
Pins: 1 - Gate 2 - Collector
3 - Emitter
TO-220 Outline
