OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXYA50N65C3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 12. Maximum Transient Thermal Impedance
aasss
0.4
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090100
I
C
(A)
g
f s
(S)
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A)
T
J
= 150ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
(nC)
V
GE
(V)
V
CE
= 325V
I
C
= 36A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
(V)
Capacitance (pF
)
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
(V)
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limi
t
100µs
DC
© 2014 IXYS CORPORATION, All Rights Reserved
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
5 10152025303540455055
R
G
()
E
off
(mJ)
0
1
2
3
4
5
6
7
8
E
on
(mJ)
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
5 10152025303540455055
R
G
()
t
f i
(ns)
0
80
160
240
320
400
480
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 72A
I
C
= 36A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.4
0.8
1.2
1.6
2.0
2.4
15 20 25 30 35 40 45 50 55 60 65 70 75
I
C
(A)
E
off
(mJ)
0
1
2
3
4
5
6
E
on
(mJ)
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
25 50 75 100 125 150
T
J
(ºC)
E
off
(mJ)
0
1
2
3
4
5
6
7
E
on
(mJ)
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
10
20
30
40
50
60
70
80
90
15 20 25 30 35 40 45 50 55 60 65 70 75
I
C
(A)
t
f i
(ns)
40
60
80
100
120
140
160
180
200
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
(ºC)
t
f i
(ns)
40
60
80
100
120
140
160
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
I
C
= 72A
I
C
= 36A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
IXYS REF: IXY_50N65C3D1(5D) 9-03-14
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
15 20 25 30 35 40 45 50 55 60 65 70 75
I
C
(A)
t
r i
(ns)
13
16
19
22
25
28
31
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
(ºC)
t
r i
(ns)
18
19
20
21
22
23
24
25
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
I
C
= 72A
I
C
= 36A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
5 10152025303540455055
R
G
()
t
r i
(ns)
0
10
20
30
40
50
60
70
80
90
t
d
(
on
)
(ns)
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
Fig. 22. Maximum Peak Load Current vs. Frequency
10
20
30
40
50
60
70
80
90
100
10 100 1000
f
max
(kH)
I
C
(A)
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 400V
V
GE
= 15V
R
G
= 5
Duty Cycle = 0.5
Square Wave
Triangular Wave
P1-P3P4-P6

IXYA50N65C3

Mfr. #:
Buy IXYA50N65C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/130A XPT C3-Class TO-263
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet