FFSH3065A

© Semiconductor Components Industries, LLC, 2017
January, 2018 Rev. 1
1 Publication Order Number:
FFSH3065A/D
FFSH3065A
Silicon Carbide Schottky
Diode
650 V, 30 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 180 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
This Device is PbFree and is RoHS Compliant
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
TO2472LD
CASE 340CL
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
1. Cathode 2. Anode
V
RRM
I
F
650 V 30 A
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH3065A = Specific Device Code
$Y&Z&3&K
FFSH
3065A
1
2
FFSH3065A
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C, Unless otherwise specified)
Symbol
Parameter FFSH3065A Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 180 mJ
I
F
Continuous Rectified Forward Current
@ TC < 121°C 30
A
@ TC < 135°C 26
I
F,
Max
NonRepetitive Peak Forward Surge Current
TC = 25°C, 10 μs 1125 A
TC = 150°C, 10 μs 1040 A
I
F,
SM
NonRepetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 150 A
I
F,
RM
Repetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 75 A
P
tot
Power Dissipation
TC = 25°C 259 W
TC = 150°C 43 W
T
J
, T
STG
Operating and Storage Temperature Range 55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 180 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 27 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Rating Unit
R
q
JC
Thermal Resistance, Junction to Case, Max. 0.58
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity
FFSH3065A FFSH3065A TO2472L Tube N/A N/A 30 Units
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min Typ Max Unit
V
F
Forward Voltage
IF = 30 A, TC = 25°C 1.50 1.75
V
IF = 30 A, TC = 125°C 1.60 2.0
IF = 30 A, TC = 175°C 1.72 2.4
I
R
Reverse Current
VR = 650 V, TC = 25°C 200
μA
VR = 650 V, TC = 125°C 400
VR = 650 V, TC = 175°C 600
Q
C
Total Capacitive Charge V = 400 V 100 nC
C Total Capacitance
VR = 1 V, f = 100 kHz 1705
pF
VR = 200 V, f = 100 kHz 180
VR = 400 V, f = 100 kHz 130
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FFSH3065A
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating
Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
I
F
, Forward Current (A)
V
R
, Reverse Voltage (V)
I
R
, Reverse Current (A)
V
R
, Reverse Voltage (V)
Capacitance (pF)
V
R
, Reverse Voltage (V)
Q
C
, Capacitance Charge (nC) I
F
, Peak Forward Current (A)
V
F
, Forward Voltage (V)
T
C
, Case Temperature (5C)
T
C
, Case Temperature (5C)
P
TOT
, Power Dissipation (W)
25 50 75 100 125 150 175
25 50 75 100 125 150 175
0.0 0.5 1.0 1.5 2.0
0 100 200 300 400 500 600 650
0.1 1 10 100 650
0
10
20
30
T
J
= 25°C
T
J
= 75°C
T
J
= 175°C
T
J
= 125°C
T
J
= 55°C
10
5
10
6
10
7
10
8
10
9
100 200 300 400 500 600
0
50
100
150
200
250
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
0
50
100
150
200
250
300
0
20
40
60
80
100
120
140
10
100
1000
5000

FFSH3065A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 30A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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