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FFSH3065A

P1-P3P4-P6P7-P7
FFSH3065A
www.onsemi.com
4
TYPICAL CHARACTERISTICS (Continued)
(T
J
= 25°C unless otherwise noted)
Figure 7. Capacitance Stored Energy
t, Rectangular Pulse Duration (sec)
r(t), Normalized Effective
Transient Thermal Resistance
0.001
0.01
0.1
1
2
10
−5
10
−4
10
−3
10
−2
10
−1
110
−6
Figure 8. Junction−to−Case Transient Thermal Response Curve
V
R
, Reverse Voltage (V)
E
C
, Capacitive Energy (mJ)
0 100 200 300 400 500 600 650
0
10
20
30
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDER
Notes:
Z
q
JC
(t) = r(t) × R
q
JC
R
q
JC
= 0.58°C/W
Peak T
J
= P
DM
× Z
q
JC
(t) + T
C
Duty Cycle, D = t
1
/ t
2
P
DM
t
1
t
2
FFSH3065A
www.onsemi.com
5
TEST CIRCUIT AND WAVEFORMS
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
R(AVL)
/(V
R(AVL)
− V
DD
)]
Q1 = IGBT (BV
CES
> DUT V
R(AVL)
)
Q1
CURRENT
SENSE
DUT
V
DD
V
DD
+
−
LR
IV
I
L
I
L
V
AVL
t0 t1 t2 t
FFSH3065A
www.onsemi.com
6
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE O
P1-P3P4-P6P7-P7

FFSH3065A

Mfr. #:
Buy FFSH3065A
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 30A SIC SBD
Lifecycle:
New from this manufacturer.
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