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NGTB50N60SWG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2014
September, 2016 − Rev. 1
1 Publication Order Number:
NGTB50N60SW/D
NGTB50N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• This is a Pb−Free Device
Typical Applications
• Inductive Heating
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
600 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
100
50
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
200 A
Diode forward current
@ T
C = 25°C
@ T
C = 100°C
I
F
100
50
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
200 A
Gate−emitter voltage V
GE
$20 V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
W
Operating junction temperature
range
T
J
−55 to +150 °C
Storage temperature range T
stg
−55 to +150 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340AL
C
G
50 A, 600 V
V
CEsat
= 2.4 V
E
off
= 0.60 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB50N60SWG TO−247
(Pb−Free)
30 Units / Rail
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
50N60SW
AYWWG
G
E
C
NGTB50N60SWG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.87 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
1.46 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
600 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 50 A, T
J
= 150°C
V
CEsat
−
−
2.4
2.6
2.6
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 150 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
=
150°C
I
CES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 3100 −
pF
Output capacitance C
oes
− 120 −
Reverse transfer capacitance C
res
− 80 −
Gate charge total
V
CE
= 480 V, I
C
= 50 A, V
GE
= 15 V
Q
g
135
nC
Gate to emitter charge Q
ge
27
Gate to collector charge Q
gc
67
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(on)
70
ns
Rise time t
r
32
Turn−off delay time t
d(off)
144
Fall time t
f
66
Turn−off switching loss E
off
0.60 mJ
Turn−on delay time
T
J
= 150°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(on)
70
ns
Rise time t
r
36
Turn−off delay time t
d(off)
150
Fall time t
f
85
Turn−off switching loss E
off
1.11 mJ
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 25 A
V
GE
= 0 V, I
F
= 25 A, T
J
= 150°C
V
F
1.2
1.11
1.5 V
Reverse recovery time
T
J
= 25°C
I
F
= 25 A, V
R
= 200 V
di
F
/dt = 200 A/ms
t
rr
376 ns
Reverse recovery charge Q
rr
4145 nc
Reverse recovery current I
rrm
22 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NGTB50N60SWG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
140
120
100
80
60
40
20
0
012345 876
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Output Characteristics
V
GE
= 17 V to 15 V
11 V
10 V
9 V
7 V to 8 V
T
J
= 25°C
13 V
V
GE
= 17 V
to 13 V
11 V
10 V
9 V
8 V
7 V
T
J
= 150°C
012345 876
140
120
100
80
60
40
20
0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 2. Output Characteristics
140
120
100
80
60
40
20
0
012345 876
160
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Output Characteristics
T
J
= −55°C
V
GE
= 17 V
to 13 V
11 V
10 V
9 V
7 V to 8 V
V
GE
, GATE−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Typical Transfer Characteristics
T
J
= 25°C
T
J
= 150°C
140
120
100
80
60
40
20
0
048 1612
−75
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0
−25 25 75 125 175
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR−EMITTER VOLT-
AGE (V)
Figure 5. V
CE(sat)
vs. T
J
I
C
= 80 A
I
C
= 40 A
I
C
= 20 A
I
C
= 5 A
0 10 20 10090
10000
1000
100
10
8030 40 706050
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CAPACITANCE (pF)
Figure 6. Typical Capacitance
C
ies
C
oes
C
res
P1-P3P4-P6P7-P9P10-P10

NGTB50N60SWG

Mfr. #:
Buy NGTB50N60SWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 600V/50A IGBT FS1 TO-247
Lifecycle:
New from this manufacturer.
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