NGTB50N60SWG
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5
TYPICAL CHARACTERISTICS
E
off
, TURN−OFF SWITCHING LOSS (mJ)
R
G
, GATE RESISTOR (W)
Figure 13. Switching Loss vs. R
G
1.6
5
1.4
1.2
1
0.8
0.6
0.4
0.2
0
15 25 35 45 55 65 75 85
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
T
J
= 150°C
SWITCHING TIME (ns)
R
G
, GATE RESISTOR (W)
Figure 14. Switching Time vs. R
G
1000
51525354555657585
100
10
1
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
T
J
= 150°C
t
d(off)
t
d(on)
t
f
t
r
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
E
off
, TURN−OFF SWITCHING LOSS
(mJ)
1.4
175 225 275 325 375 425 475 525 575
1.2
1
0.8
0.6
0.4
0.2
0
V
GE
= 15 V
I
C
= 50 A
R
G
= 10 W
T
J
= 150°C
SWITCHING TIME (ns)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. V
CE
1000
100
10
1
175 225 275 325 375 425 475 525 575
t
d(off)
t
d(on)
t
f
t
r
V
GE
= 15 V
I
C
= 50 A
R
G
= 10 W
T
J
= 150°C
1000
1
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 17. Safe Operating Area
10 100 1000
100
10
1
0.1
0.01
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
