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NX2301P,215

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.8 V R
DSon
rated for Low Voltage Gate Drive
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
, t ≤ 5s.
[2] Pulse test: t
p
≤ 300 μs; δ≤0.01.
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
amb
=25°C--−20 V
V
GS
gate-source voltage T
amb
=25°C--±8V
I
D
drain current T
amb
=25°C;
V
GS
= −4.5 V
[1]
--−2A
R
DSon
drain-source on-state
resistance
T
j
=25°C;
V
GS
= −4.5 V;
I
D
= −1A
[2]
- 100 120 mΩ
NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 26 October 2010 2 of 16
NXP Semiconductors
NX2301P
20 V, 2 A P-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
12
3
017aaa09
4
S
D
G
Table 3. Ordering information
Type number Package
Name Description Version
NX2301P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
NX2301P MG*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
amb
=25°C-−20 V
V
GS
gate-source voltage T
amb
=25°C-±8V
I
D
drain current V
GS
= −4.5 V
[1]
T
amb
=25°C-−2A
T
amb
=100°C-−1.2 A
I
DM
peak drain current T
amb
=25°C;
single pulse; t
p
≤ 10 μs
- −6A
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

NX2301P,215

Mfr. #:
Buy NX2301P,215
Manufacturer:
Nexperia
Description:
MOSFET P-CH -20 V -2 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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