NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 26 October 2010 7 of 16
NXP Semiconductors
NX2301P
20 V, 2 A P-channel Trench MOSFET
T
amb
=25°CT
amb
=25°C; V
DS
= −10 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
amb
=25°C
(1) V
GS
= −1.4 V
(2) V
GS
= −1.6 V
(3) V
GS
= −1.8 V
(4) V
GS
= −2.0 V
I
D
= −2A
(1) T
amb
= 125 °C
(2) T
amb
=25°C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0.0 −5.0−4.0−2.0 −3.0−1.0
−1.0
−2.0
−3.0
I
D
(A)
0.0
−1.8 V
−1.6 V
−1.4 V
V
GS
= −2.0 V
−1.2 V
V
GS
(V)
0.0 −1.5−1.0−0.5
−10
−4
−10
−5
−10
−3
I
D
(A)
−10
−6
(2)(1)
(3)
I
D
(A)
0.0 −2.5−2.0−1.0 −1.5−0.5
017aaa100
0.50
0.25
0.75
1.0
R
DSon
(Ω)
0.0
(1) (2)
(3)
(4)
V
GS
(V)
0.0 −8.0−6.0−2.0 −4.0
017aaa101
0.2
0.1
0.3
0.4
R
Dson
(Ω)
0.0
(1)
(2)
