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MMBT5087LT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1 Publication Order Number:
MMBT5087LT1/D
MMBT5087L
Low Noise Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−50 Vdc
Collector−Base Voltage V
CBO
−50 Vdc
Emitter−Base Voltage V
EBO
−3.0 Vdc
Collector Current − Continuous I
C
−50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT5087LT1G,
NSVMMBT5087LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
1
2
3
MMBT5087LT3G,
NSVMMBT5087LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2Q M G
G
2Q = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
MMBT5087L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−50 − Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−50 − Vdc
Collector Cutoff Current
(V
CB
= −10 Vdc, I
E
= 0)
(V
CB
= −35 Vdc, I
E
= 0)
I
CBO
−
−
−10
−50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
h
FE
250
250
250
800
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
V
CE(sat)
− −0.3 Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
V
BE(sat)
− 0.85 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= −500 mAdc, V
CE
= −5.0 Vdc, f = 20 MHz)
f
T
40 − MHz
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.0 pF
Small−Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc, f = 1.0 kHz)
h
fe
250 900 −
Noise Figure
(I
C
= −20 mAdc, V
CE
= −5.0 Vdc, R
S
= 10 kW, f = 1.0 kHz)
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc, R
S
= 3.0 kW, f = 1.0 kHz)
NF
−
−
2.0
2.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(V
CE
= −  5.0 Vdc, T
A
= 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
R
S
≈ 0
I
C
= 10 mA
100 mA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
R
S
≈∞
I
C
= 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
2.0
1.0 mA
0.2
300 mA
MMBT5087L
www.onsemi.com
3
NOISE FIGURE CONTOURS
(V
CE
= −  5.0 Vdc, T
A
= 25°C)
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
Figure 3. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
I
C
, COLLECTOR CURRENT (mA)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband
I
C
, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is Defined as:
NF + 20 log
10
ƪ
e
n
2
) 4KTR
S
) I
n
2
R
S
2
4KTR
S
ƫ
1ń2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
−23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
1.0 dB
2.0 dB
3.0 dB
20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
20 30 50 70 100 200 300 500 700 1.0k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
P1-P3P4-P6P7-P7

MMBT5087LT1G

Mfr. #:
Buy MMBT5087LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 50mA 50V PNP
Lifecycle:
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