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SPA07N65C3XKSA1

P1-P3P4-P6P7-P9P10-P12P13-P15
2010-12-21Rev. 1.92
Page 10
SPP07N65C3, SPI07N65C3
SPA07N65C3
21 Avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 1.5 A, V
DD
= 50 V
20 40 60 80 100 120
°C
160
T
j
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
E
AS
23 Avalanche power losses
P
AR
= f (f )
parameter:
E
AR
=0.5mJ
10
4
10
5
10
6
MHz
f
0
100
200
300
W
500
P
AR
22 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100
°C
180
T
j
585
605
625
645
665
685
705
725
745
V
785
SPP07N65C3
V
(BR)DSS
24 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0V, f=1 MHz
0 100 200 300 400
V
600
V
DS
0
10
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
2010-12-21Rev. 1.92
Page 11
SPP07N65C3, SPI07N65C3
SPA07N65C3
25 Typ. C
oss
stored energy
E
oss
=f(V
DS
)
0 100 200 300 400
V
600
V
DS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
μJ
5.5
E
oss
Definition of diodes switching characteristics
2010-12-21Rev. 1.92
Page 12
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO220-3
P1-P3P4-P6P7-P9P10-P12P13-P15

SPA07N65C3XKSA1

Mfr. #:
Buy SPA07N65C3XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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