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SPA07N65C3XKSA1

P1-P3P4-P6P7-P9P10-P12P13-P15
2010-12-21Rev. 1.92
Page 4
SPP07N65C3, SPI07N65C3
SPA07N65C3
Electrical Characteristics
Parameter
Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
I
S
T
C
=25°C - - 7.3 A
Inverse diode direct current,
pulsed
I
SM
- - 21.9
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=I
S
- 1 1.2 V
Reverse recovery time t
rr
V
R
=480V, I
F
=I
S
,
di
F
/dt=100A/μs
- 400 600 ns
Reverse recovery charge Q
rr
- 4 - μC
Peak reverse recovery current I
rrm
- 28 - A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25°C - 800 - A/μs
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
R
th1
0.024 0.024 K/W C
th1
0.00012 0.00012 Ws/K
R
th2
0.046 0.046 C
th2
0.0004578 0.0004578
R
th3
0.085 0.085 C
th3
0.000645 0.000645
R
th4
0.308 0.195 C
th4
0.001867 0.001867
R
th5
0.317 0.45 C
th5
0.004795 0.007558
R
th6
0.112 2.511 C
th6
0.045 0.412
External Heatsink
T
j T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2010-12-21Rev. 1.92
Page 5
SPP07N65C3, SPI07N65C3
SPA07N65C3
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120
°C
160
T
C
0
10
20
30
40
50
60
70
80
W
100
SPP07N65C3
P
tot
2 Power dissipation FullPAK
P
tot
= f (T
C
)
0 20 40 60 80 100 120
°C
160
T
C
0
4
8
12
16
20
24
28
W
34
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (V
DS
)
parameter: D = 0,
T
C
= 25°C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
2010-12-21Rev. 1.92
Page 6
SPP07N65C3, SPI07N65C3
SPA07N65C3
5 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
= f (t
p
)
parameter: D =
t
p
/t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 10 μs, V
GS
0 5 10 15
V
DS
25
V
0
4
8
12
16
A
24
I
D
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
8 Typ. output characteristic
I
D
= f (V
DS
); T
j
=150°C
parameter: t
p
= 10 μs, V
GS
0 2 4 6 8 10 12 14 16 18 20 22
V
25
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
4V
4.5V
5V
5.5V
6V
20V
8V
6.5V
P1-P3P4-P6P7-P9P10-P12P13-P15

SPA07N65C3XKSA1

Mfr. #:
Buy SPA07N65C3XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
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