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PSMN017-80PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15
PSMN017-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 27 September 2011 3 of 14
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aad388
10
-1
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
1 ms
100 μs
10 μs
Limit R
DSon
= V
DS
/ I
D
PSMN017-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 27 September 2011 4 of 14
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base see Figure 4 -11.5K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aad234
10
-4
10
-3
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th (j-mb)
(K/W)
single shot
0.02
0.05
0.1
0.2
δ = 0.5
10
-6
t
p
T
P
t
t
p
T
δ =
PSMN017-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 27 September 2011 5 of 14
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 73 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 80--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10; see Figure 11
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
; see Figure 11
--4.8V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
234V
I
DSS
drain leakage current V
DS
=80V; V
GS
=0V; T
j
= 25 °C - 0.3 2 µA
V
DS
=80V; V
GS
=0V; T
j
=125°C --50µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=10A; T
j
= 175 °C;
see Figure 12
- 32.64 40.8 mΩ
V
GS
=10V; I
D
=10A; T
j
= 100 °C;
see Figure 12
- 15.2 29 mΩ
V
GS
=10V; I
D
=10A; T
j
=25°C;
see Figure 13
- 13.7 17 mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 1 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=0A; V
DS
=0V; V
GS
=10V - 22 - nC
I
D
=25A; V
DS
=40V; V
GS
= 10 V; see
Figure 14
; see Figure 15
-26-nC
Q
GS
gate-source charge - 7.7 - nC
Q
GS(th)
pre-threshold gate-source
charge
-4.6-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-3-nC
Q
GD
gate-drain charge - 6 - nC
V
GS(pl)
gate-source plateau voltage I
D
=25A; V
DS
=40V; see Figure 15 -4.7-V
C
iss
input capacitance V
DS
=40V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 16
- 1573 - pF
C
oss
output capacitance - 154 - pF
C
rss
reverse transfer capacitance - 88 - pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
=1.6Ω; V
GS
=10V;
R
G(ext)
=4.7Ω
-14-ns
t
r
rise time - 12 - ns
t
d(off)
turn-off delay time - 27 - ns
t
f
fall time -8-ns
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN017-80PS,127

Mfr. #:
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Manufacturer:
Nexperia
Description:
MOSFET N-CHAN80V 50A
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New from this manufacturer.
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