PSMN017-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 27 September 2011 6 of 14
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Source-drain diode
V
SD
source-drain voltage I
S
=10A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.79 1.2 V
t
rr
reverse recovery time I
S
=40A; dI
S
/dt = 100 A/µs;
V
GS
=0V; V
DS
=40V
-41-ns
Q
r
recovered charge - 55 - nC
Table 6. Characteristics
…continued
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
003aad458
0
10
20
30
40
50
60
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
6.5
6
8
5.5
10
5
20
V
GS
(V) = 4.5
003aad460
0
10
20
30
40
50
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
003aad464
500
1000
1500
2000
2500
036912
V
GS
(V)
C
(pF)
C
iss
C
rss
003aad465
0
10
20
30
40
50
60
70
01020304050
I
D
(A)
g
fs
(S)
