SI2319DS-T1-E3 Datasheet SI2319DS-T1-E3, SI2319DS-T1-GE3 | P1-P3

Vishay Siliconix

Si2319DS

Document Number: 72315

S09-0130-Rev. C, 02-Feb-09

www.vishay.com

1

P-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

APPLICATIONS

• Load Switch

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface mounted on FR4 board, t ≤ 5 s.

c. Surface Mounted on FR4 board.

For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm

.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

b

- 40

0.082 at V

GS

= - 10 V

- 3.0

0.130 at V

GS

= - 4.5 V

- 2.4

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

*Marking Code

Si2319DS (C9)*

Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free)

Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 40

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

b

T

A

= 25 °C

I

D

- 3.0 - 2.3

A

T

A

= 70 °C

- 2.4 - 1.85

Pulsed Drain Current

a

I

DM

- 12

Continuous Source Current (Diode Conduction)

b

I

S

- 1.0 - 0.62

Power Dissipation

b

T

A

= 25 °C

P

D

1.25 0.75

W

T

A

= 70 °C

0.8 0.48

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b

R

thJA

75 100

°C/W

Maximum Junction-to-Ambient

c

120 166

Maximum Junction-to-Foot (Drain)

R

thJF

40 50

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Document Number: 72315

S09-0130-Rev. C, 02-Feb-09

Vishay Siliconix

Si2319DS

Notes:

a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.

b. For design aid only, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Limits

Unit Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 40

V

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1 - 3.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 40 V, V

GS

= 0 V

- 1

µA

V

DS

= - 40 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 10 V

- 6 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 3.0 A

0.065 0.082

Ω

V

GS

= - 4.5 V, I

D

= - 2.4 A

0.100 0.130

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 3.0 A

7.0 S

Diode Forward Voltage

a

V

SD

I

S

= - 1.25 A, V

GS

= 0 V

- 0.8 - 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 20 V, V

GS

= - 10 V

I

D

≅ - 3 A

11.3 17

nCGate-Source Charge

Q

gs

1.7

Gate-Drain Charge

Q

gd

3.3

Input Capacitance

C

iss

V

DS

= - 20 V, V

GS

= 0 V, f = 1 MHz

470

pFOutput Capacitance

C

oss

85

Reverse Transfer Capacitance

C

rss

65

Switching

c

Tur n - O n T i m e

t

d(on)

V

DD

= - 20 V, R

L

= 20 Ω

I

D

≅ - 1.0 A, V

GEN

= - 4.5 V

R

g

= 6 Ω

715

ns

t

r

15 25

Turn-Off Time

t

d(off)

25 40

t

f

25 40

Document Number: 72315

S09-0130-Rev. C, 02-Feb-09

www.vishay.com

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Vishay Siliconix

Si2319DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

4

8

12

16

20

0246810

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

V

GS

= 10 V thru 5 V

1 V, 2 V

3 V

4 V

R

DS(on)

- On-Resistance (Ω)

0.00

0.04

0.08

0.12

0.16

0.20

024681012

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

2

4

6

8

10

024681012

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 20 V

I

D

= 3 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

12

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

GS

- Gate-to-Source Voltage (V)

Drain Current (A)I

D

-

T

C

= 125 °C

- 55 °C

25 °C

0

100

200

300

400

500

600

700

800

0 5 10 15 20 25 30 35 40

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 3 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

SI2319DS-T1-E3

SI2319DS-T1-E3

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