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SI2319DS-T1-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
Vishay Siliconix
Si2319DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
20
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
1
10
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
I
D
= 250 µA
V
GS(th)
Variance (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0246810
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 3 A
Time (s)
Power (W)
T
A
= 25 °C
Single Pulse
10
8
6
4
2
0
0.01 0.1 1 10 100 1000
Safe Operating Area, Junction-to-Case
- Drain Current (A)I
D
100.0
1.0
0.1 1 10 100
0.01
10.0
0.1
(
T
A
= 25 °C
Single Pulse
10 ms
100 ms
10 µs
100 µs
1 ms
10 s, 1 s
100 s, DC
V - Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
DS
Limited by
R *
DS(on)
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
www.vishay.com
5
Vishay Siliconix
Si2319DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72315
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
Square Wave Pulse Duration (s)
10
-4
10
-3
10
-2
10
-1
1 10 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 166 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
100
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E
1
1
3
2
S
e
e
1
D
A
2
A
A
1
C
Seating Plane
0.10 mm
0.004"
C
C
L
1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim
MILLIMETERS INCHES
Min Max Min Max
A 0.89 1.12 0.035 0.044
A
1
0.01 0.10 0.0004 0.004
A
2
0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E
1
1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e
1
1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L
1
0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
P1-P3P4-P6P7-P9

SI2319DS-T1-E3

Mfr. #:
Buy SI2319DS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
Lifecycle:
New from this manufacturer.
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