SA572
http://onsemi.com
4
Audio Signal Processing IC Combines VCA and
Fast Attack/Slow Recovery Level Sensor
In high-performance audio gain control applications, it
is desirable to independently control the attack and
recovery time of the gain control signal. This is true, for
example, in compandor applications for noise reduction. In
high end systems the input signal is usually split into two
or more frequency bands to optimize the dynamic behavior
for each band. This reduces low frequency distortion due
to control signal ripple, phase distortion, high frequency
channel overload and noise modulation. Because of the
expense in hardware, multiple band signal processing up to
now was limited to professional audio applications.
With the introduction of the SA572 this high-
performance noise reduction concept becomes feasible for
consumer hi fi applications. The SA572 is a dual channel
gain control IC. Each channel has a linearized,
temperature-compensated gain cell and an improved level
sensor. In conjunction with an external low noise op amp
for current-to-voltage conversion, the VCA features low
distortion, low noise and wide dynamic range.
The novel level sensor which provides gain control
current for the VCA gives lower gain control ripple and
independent control of fast attack, slow recovery dynamic
response. An attack capacitor C
A
with an internal 10 k
resistor R
A
defines the attack time
A
. The recovery time
R
of a tone burst is defined by a recovery capacitor C
R
and
an internal 10 k resistor R
R
. Typical attack time of 4.0 ms
for the high-frequency spectrum and 40 ms for the low
frequency band can be obtained with 0.1 F and 1.0 F
attack capacitors, respectively. Recovery time of 200 ms
can be obtained with a 4.7 F recovery capacitor for a
100 Hz signal, the third harmonic distortion is improved by
more than 10 dB over the simple RC ripple filter with a
single 1.0 F attack and recovery capacitor, while the
attack time remains the same.
The SA572 is assembled in a standard 16-pin dual in-line
plastic package and in oversized SOL package. It operates
over a wide supply range from 6.0 V to 22 V. Supply
current is less than 6.0 mA. The SA572 is designed for
applications from 40°C to +85°C.
BASIC APPLICATIONS
Description
The SA572 consists of two linearized, temperature-
compensated gain cells (G), each with a full-wave
rectifier and a buffer amplifier as shown in the block
diagram. The two channels share a 2.5 V common bias
reference derived from the power supply but otherwise
operate independently. Because of inherent low distortion,
low noise and the capability to linearize large signals, a
wide dynamic range can be obtained. The buffer amplifiers
are provided to permit control of attack time and recovery
time independent of each other. Partitioned as shown in the
block diagram, the IC allows flexibility in the design of
system levels that optimize DC shift, ripple distortion,
tracking accuracy and noise floor for a wide range of
application requirements.
Gain Cell
Figure 3 shows the circuit configuration of the gain cell.
Bases of the differential pairs Q
1
-Q
2
and Q
3
-Q
4
are both
tied to the output and inputs of OPA A
1
. The negative
feedback through Q
1
holds the V
BE
of Q
1
-Q
2
and the V
BE
of Q
3
-Q
4
equal. The following relationship can be derived
from the transistor model equation in the forward active
region.
V
BE
Q3Q4
+
BE
Q1Q2
(V
BE
= V
T
I
IN
IC/IS)
V
T
I
n
ǒ
1
2
I
G
)
1
2
I
O
I
S
Ǔ* V
T
I
n
ǒ
1
2
I
G
*
1
2
I
O
I
S
Ǔ
+ V
T
I
n
ǒ
I
1
) I
IN
I
S
Ǔ
* V
T
I
n
ǒ
I
2
* I
1
* I
IN
I
S
Ǔ
(eq. 1)
where I
IN
+
V
IN
R
1
R
1
= 6.8 k
I
1
= 140 A
I
2
= 280 A
I
O
is the differential output current of the gain cell and I
G
is the gain control current of the gain cell.
If all transistors Q
1
through Q
4
are of the same size,
equation 1 can be simplified to:
I
O
+
2
I
2
@ I
IN
@ I
G
*
1
I
2
ǒ
I
2
* 2I
1
Ǔ
@ I
G
(eq. 2)
The first term of equation 2 shows the multiplier
relationship of a linearized two quadrant transconductance
amplifier. The second term is the gain control feedthrough
due to the mismatch of devices. In the design, this has been
minimized by large matched devices and careful layout.
Offset voltage is caused by the device mismatch and it leads
to even harmonic distortion. The offset voltage can be
trimmed out by feeding a current source within "25 A
into the THD trim pin.
SA572
http://onsemi.com
5
The residual distortion is third harmonic distortion and
is caused by gain control ripple. In a compandor system,
available control of fast attack and slow recovery improve
ripple distortion significantly. At the unity gain level of
100 mV, the gain cell gives THD (total harmonic
distortion) of 0.17% typ. Output noise with no input signals
is only 6.0 V in the audio spectrum (10 Hz-20 kHz). The
output current I
O
must feed the virtual ground input of an
operational amplifier with a resistor from output to
inverting input. The non-inverting input of the operational
amplifier has to be biased at V
REF
if the output current I
O
is DC coupled.
V
REF
THD
TRIM
V+
1
2
I
G
)
1
2
I
O I
1
140A
280A
I
2
I
G
I
O
Q
4
Q
3
Q
1
Q
2
V
IN
+
A1
Figure 3. Basic Gain Cell Schematic
R
1
6.8k
Rectifier
The rectifier is a full-wave design as shown in Figure 4.
The input voltage is converted to current through the input
resistor R
2
and turns on either Q
5
or Q
6
depending on the
signal polarity. Deadband of the voltage to current
converter is reduced by the loop gain of the gain block A
2
.
If AC coupling is used, the rectifier error comes only from
input bias current of gain block A
2
. The input bias current
is typically about 70 nA. Frequency response of the gain
block A
2
also causes second-order error at high frequency.
The collector current of Q
6
is mirrored and summed at the
collector of Q
5
to form the full wave rectified output
current I
R
. The rectifier transfer function is:
I
R
+
V
IN
* V
REF
R
2
(eq. 3)
If V
IN
is AC-coupled, then the equation will be reduced
to:
I
RAC
+
V
IN
(AVG)
R
2
The internal bias scheme limits the maximum output
current I
R
to be around 300 A. Within a "1.0 dB error
band the input range of the rectifier is about 52 dB.
V
IN
V
REF
V+
A2
+
I
R
+
V
IN
* V
REF
R
2
Figure 4. Simplified Rectifier Schematic
Q
5
Q
6
R
2
D
7
SA572
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6
Buffer Amplifier
In audio systems, it is desirable to have fast attack time
and slow recovery time for a tone burst input. The fast
attack time reduces transient channel overload but also
causes low-frequency ripple distortion. The low-frequency
ripple distortion can be improved with the slow recovery
time. If different attack times are implemented in
corresponding frequency spectrums in a split band audio
system, high quality performance can be achieved. The
buffer amplifier is designed to make this feature available
with minimum external components. Referring to
Figure 5, the rectifier output current is mirrored into the
input and output of the unipolar buffer amplifier A
3
through
Q
8
, Q
9
and Q
10
. Diodes D
11
and D
12
improve tracking
accuracy and provide common-mode bias for A
3
. For a
positive-going input signal, the buffer amplifier acts like a
voltage-follower. Therefore, the output impedance of A
3
makes the contribution of capacitor C
R
to attack time
insignificant. Neglecting diode impedance, the gain Ga(t)
for G can be expressed as follows:
Ga(t) + (Ga
INT
* Ga
FNL
)e
*t
A
) Ga
FNL
Ga
INT
= Initial Gain
Ga
FNL
= Final Gain
A
= R
A
C
A
= 10 k C
A
where
A
is the attack time constant and R
A
is a 10 k
internal resistor. Diode D
15
opens the feedback loop of A
3
for a negative-going signal if the value of capacitor C
R
is
larger than capacitor C
A
. The recovery time depends only
on C
R
R
R
. If the diode impedance is assumed negligible,
the dynamic gain G
R
(t) for G is expressed as follows:
G
R
(t) + (G
RINT
* G
RFNL
)e
*t
R
) G
RFNL
G
R
(t) + (G
RINT
* G
RFNL
)e
*t
R
) G
RFNL
R
= R
R
C
R
= 10 k C
R
where
R
is the recovery time constant and R
R
is a 10 k
internal resistor. The gain control current is mirrored to the
gain cell through Q
14
. The low level gain errors due to input
bias current of A
2
and A
3
can be trimmed through the
tracking trim pin into A
3
with a current source of "3.0 A.
X2
X2
A3
TRACKING
TRIM
IR
1
IR
2
I
Q
= 2IR
2
V+
I
R
+
V
IN
R
+
Figure 5. Buffer Amplifier Schematic
10k
10k
Q
8
Q
9
Q
10
Q
16
D
13
D
15
Q
14
Q
18
D
11
D
12
C
A
C
R
Q
17

SA572DR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Audio Amplifiers Dual Channel Hi Perf
Lifecycle:
New from this manufacturer.
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