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IXGH48N60B3D1

P1-P3P4-P6P7-P7
© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C110
T
C
= 110°C 48 A
I
D110
T
C
= 110°C 30 A
I
CM
T
C
= 25°C, 1ms 280 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 5Ω I
CM
= 120 A
(RBSOA) Clamped inductive load @ ≤ 600V
P
C
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6 g
DS100036(09/08)
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
300 μA
V
GE
= 0V T
J
= 125°C 1.75 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 32A, V
GE
= 15V, Note 1 1.8 V
V
CES
= 600V
I
C110
= 48A
V
CE(sat)
≤≤
≤≤
≤ 1.8V
GenX3
TM
600V IGBT
with Diode
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGH48N60B3D1
TO-247(IXGH)
G
C
E
( TAB )
Features
z
Optimized for low conduction and
switching losses
z
Square RBSOA
z
Anti-parallel ultra fast diode
z
International standard package
Advantages
z
High power density
z
Low gate drive requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH48N60B3D1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= 30A, V
CE
= 10V, Note 1 28 46 S
C
ies
3980 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 190 pF
C
res
45 pF
Q
g
115 nC
Q
ge
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
21 nC
Q
gc
40 nC
t
d(on)
22 ns
t
ri
25 ns
E
on
0.84 mJ
t
d(off)
130 200 ns
t
fi
116 200 ns
E
off
0.66 1.20 mJ
t
d(on)
19 ns
t
ri
25 ns
E
on
1.71 mJ
t
d(off)
190 ns
t
fi
157 ns
E
off
1.30 mJ
R
thJC
0.42 °C/W
R
thCS
0.21 °C/W
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
Inductive Load, T
J
= 125°C
I
C
= 30A, V
GE
= 15V
V
CE
= 480V, R
G
= 5Ω
Reverse Diode (FRED) (D1 Version ONLY)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
V
F
I
F
= 30A, V
GE
= 0V, Note 1 2.8 V
T
J
= 150°C 1.6 V
I
RM
4 A
t
rr
T
J
= 100°C 100 ns
R
thJC
1.5 °C/W
R
thCS
1.5 °C/W
I
F
= 30A, V
GE
= 0V, V
R
= 100V
-di
F
/dt =100A/μs
I
F
= 1A; -di/dt = 100A/μs, V
R
= 30V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Inductive Load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 480V, R
G
= 5Ω
© 2008 IXYS CORPORATION, All rights reserved
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
0246810121416
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 80A
I
C
= 40A
I
C
= 20A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 80A
40A
20A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXGH48N60B3D1
P1-P3P4-P6P7-P7

IXGH48N60B3D1

Mfr. #:
Buy IXGH48N60B3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 75 Amps 600V 1.05 V Rds
Lifecycle:
New from this manufacturer.
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