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IXGH48N60B3D1

P1-P3P4-P6P7-P7
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH48N60B3D1
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5Ω
dV / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
IXYS REF: G_48N60B3D1(56) 05-05-08-A
© 2008 IXYS CORPORATION, All rights reserved
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 17. Inductive Turn-off
Switching Times vs. Gate Resistance
120
130
140
150
160
170
180
190
200
210
220
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
150
200
250
300
350
400
450
500
550
600
650
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 60A
I
C
= 30A
I
C
= 15A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 480V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
100
110
120
130
140
150
160
170
180
190
200
210
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Inductive Turn-off
Switching Times vs. Junction Temperature
100
110
120
130
140
150
160
170
180
190
200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
210
220
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 60A, 15A
I
C
= 60A, 15A
I
C
= 30A
IXGH48N60B3D1
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH48N60B3D1
IXYS REF: G_48N60B3D1(56) 05-05-08-A
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
15
20
25
30
35
40
45
50
55
60
65
70
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 15A
I
C
= 30A
I
C
= 60A
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
10
15
20
25
30
35
40
45
50
55
60
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r
- Nanoseconds
18
19
20
21
22
23
24
25
26
27
28
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
25ºC < T
J
< 125ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
5
10
15
20
25
30
35
40
45
50
55
60
65
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
16
17
18
19
20
21
22
23
24
25
26
27
28
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 15A
I
C
= 30A
I
C
= 60A
P1-P3P4-P6P7-P7

IXGH48N60B3D1

Mfr. #:
Buy IXGH48N60B3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 75 Amps 600V 1.05 V Rds
Lifecycle:
New from this manufacturer.
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