OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

UPA2735GR-E1-AT

P1-P3P4-P6P7-P8
R07DS0867EJ0100 Rev.1.00 Page 1 of 6
Aug 28, 2012
Data Sheet
μ
PA2735GR
P-channel MOSFET
–30 V, –16 A, 5.0 mΩ
Description
The
μ
PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• V
DSS
= −30 V (T
A
= 25°C)
• Low on-state resistance
⎯ R
DS(on)
= 5.0 mΩ MAX. (V
GS
= −10 V, I
D
= −16 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free
Ordering Information
Part No. LEAD PLATING PACKING Package
μ
PA2735GR-E1-AT
μ
PA2735GR-E2-AT
Pure Sn Tape 2500 p/reel Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (T
A
= 25°C)
Item Symbol Ratings Unit
Drain to Source Voltage (V
GS
= 0 V) V
DSS
−30 V
Gate to Source Voltage (V
DS
= 0 V) V
GSS
m20 V
Drain Current (DC) I
D(DC)
m16 A
Drain Current (pulse)
∗
1
I
D(pulse)
m150 A
Total Power Dissipation
∗
2
P
T1
1.1 W
Total Power Dissipation (PW = 10 sec)
∗
2
P
T2
2.5 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
−55 to +150 °C
Single Avalanche Current
∗
3
I
AS
16 A
Single Avalanche Energy
∗
3
E
AS
25.6 mJ
Thermal Resistance
Channel to Ambient Thermal Resistance
∗2
R
th(ch-A)
114 °C/W
Notes:
∗
1. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
∗
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗
3. Starting T
ch
= 25°C, V
DD
= −15 V, R
G
= 25 Ω, V
GS
= −20 → 0 V, L = 100
μ
H
R07DS0867EJ0100
Rev.1.00
Aug 28, 2012
Power SOP8
μ
PA2735GR
R07DS0867EJ0100 Rev.1.00 Page 2 of 6
Aug 28, 2012
Electrical Characteristics (T
A
= 25°C)
Item Symbol MIN. TYP. MAX. Unit Test Conditions
Zero Gate Voltage Drain Current I
DSS
−1
μ
A V
DS
= −30 V, V
GS
= 0 V
Gate Leakage Current I
GSS
m100 nA V
GS
= m20 V, V
DS
= 0 V
Gate Cut-off Voltage
V
GS(off)
−1.0 −2.5 V V
DS
= −10 V, I
D
= −1 mA
Forward Transfer Admittance
∗
1
| y
fs
| 10 S V
DS
= −10 V, I
D
= −8.0 A
R
DS(on)1
3.8 5.0 mΩ V
GS
= −10 V, I
D
= −16 A
Drain to Source On-state
Resistance
∗
1
R
DS(on)2
5.1 7.8 mΩ V
GS
= −4.5 V, I
D
= −16 A
Input Capacitance C
iss
6250 pF V
DS
= −10 V,
Output Capacitance C
oss
3900 pF V
GS
= 0 V,
Reverse Transfer Capacitance C
rss
2850 pF f = 1 MHz
Turn-on Delay Time t
d(on)
35 ns
Rise Time t
r
85 ns
V
DD
= −15 V, I
D
= −8.0 A,
V
GS
= −10 V,
Turn-off Delay Time t
d(off)
300 ns R
G
= 10 Ω
Fall Time t
f
400 ns
Total Gate Charge Q
G
195 nC V
DD
= −24 V,
Gate to Source Charge Q
GS
15 nC V
GS
= −10 V,
Gate to Drain Charge Q
GD
100 nC I
D
= −16 A
Body Diode Forward Voltage
∗
1
V
F(S-D)
0.82 V I
F
= 16 A, V
GS
= 0 V
Reverse Recovery Time t
rr
60 ns I
F
= 16 A, V
GS
= 0 V,
Reverse Recovery Charge Q
rr
88 nC di/dt = 100 A/
μ
s
Note:
∗
1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
L
V
DD
V
GS
= −20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(−)
D.U.T.
R
L
V
DD
τ = 1 s
μ
Duty Cycle ≤ 1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(−)
10%
90%
V
GS
10%
0
V
DS
(−)
90%90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
PG.
50 Ω
D.U.T.
R
L
V
DD
I
G
= −2 mA
−
μ
PA2735GR
R07DS0867EJ0100 Rev.1.00 Page 3 of 6
Aug 28, 2012
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
0 25 50 75 100 125 150 175
T
A
- Ambient Temperature - °C
I
D
- Drain Current - A
-0.01
-0.1
-1
-10
-100
-1000
-0.01 -0.1 -1 -10 -100
Single Pulse T
A
= 25°C
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Power Dissipation Limited
I
D(pulse)
= –150 A
PW = 100
μ
s
100 ms
I
D(DC)
= –16 A
1
m
s
30 ms
1
0
m
s
D
C
R
D
S
(
o
n
)
L
i
m
i
t
e
d
(
V
G
S
=
–
1
0
V
)
V
DS
- Drain to Source Voltage – V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 114 ºC/W
R
th(ch-A)
：Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
-0
-50
-100
-150
-0 -0.5 -1 -1.5
Pulsed
–4.5 V
V
GS
= –10 V
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
-0.001
-0.01
-0.1
-1
-10
-100
-0 -1 -2 -3 -4
T
A
= 150°
C
75°
C
25°
C
–
55°
C
Puls e d
V
DS
= –10 V
V
GS
- Gate to Source Voltage - V
100
μ
1 m 10 m 100 m 1 10 100 1000
P1-P3P4-P6P7-P8

UPA2735GR-E1-AT

Mfr. #:
Buy UPA2735GR-E1-AT
Manufacturer:
Description:
MOSFET P-CH 30V 16A 8SOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet