μ
PA2735GR
R07DS0867EJ0100 Rev.1.00 Page 4 of 6
Aug 28, 2012
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
V
GS(off)
– Gate to Source Cut-off Voltage - V
-0
-1
-2
-3
-50 0 50 100 150
Pulsed
V
DS
= –10 V
I
D
= –1 mA
T
ch
- Channel Temperature - °C
| y
fs
| - Forward Transfer Admittance - S
0.1
1
10
100
-0.01 -0.1 -1 -10
Pulsed
V
DS
= –10V
T
A
= 150°C
75°C
25°C
–55°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
-1 -10 -100 -1000
Pulsed
–10 V
V
GS
= –4.5 V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
12
14
16
-0 -5 -10 -15 -20
Pulsed
I
D
= –16 A
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
-50 0 50 100 150
Pulsed
I
D
= –16 A
V
GS
= –4.5 V
V
GS
= –10 V
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
-0.1 -1 -10 -100
V
GS
= 0 V
f = 1 MHz
C
rss
C
iss
C
oss
V
DS
- Drain to Source Voltage - V
