IRF6216PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 2.7 ––– ––– S V
DS
= -50V, I
D
= -1.3A
Q
g
Total Gate Charge ––– 33 49 I
D
= -1.3A
Q
gs
Gate-to-Source Charge ––– 7.2 11 nC V
DS
= -120V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 15 23 V
GS
= -10V,
t
d(on)
Turn-On Delay Time ––– 18 ––– V
DD
= -75V
t
r
Rise Time ––– 15 ––– I
D
= -1.3A
t
d(off)
Turn-Off Delay Time ––– 33 ––– R
G
= 6.5Ω
t
f
Fall Time ––– 26 ––– V
GS
= -10V
C
iss
Input Capacitance ––– 1280 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 220 ––– V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1290 ––– V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 99 ––– V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 220 ––– V
GS
= 0V, V
DS
= 0V to -120V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 200 mJ
I
AR
Avalanche Current ––– -4.0 A
Avalanche Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.6 V T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 80 120 nS T
J
= 25°C, I
F
= -1.3A
Q
rr
Reverse RecoveryCharge ––– 310 460 nC di/dt = -100A/µs
Diode Characteristics
-2.2
-19
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -150 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– -0.17 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.240 Ω V
GS
= -10V, I
D
= -1.3A
V
GS(th)
Gate Threshold Voltage -3.0 ––– -5.0 V V
DS
= V
GS
, I
D
= -250µA
––– ––– -25
µA
V
DS
= -150V, V
GS
= 0V
––– ––– -250 V
DS
= -120V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100
nA
V
GS
= 20V
I
GSS
I
DSS
Drain-to-Source Leakage Current
